SWU6N90 datasheet(2/5 Pages) SEMIPOWER

Part #	SWU6N90

Description	N-channel TO-262 MOSFET

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Manufacturer	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Direct Link	http://www.samwinsemi.com

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2 / 5 page

July. 2013. Rev. 3.0

2/5

Electrical characteristic ( T

C = 25

oC unless otherwise specified )

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Off characteristics

BVDSS

Drain to source breakdown voltage

VGS=0V, ID=250uA

900

V

ΔBV

DSS

/ ΔT

J

Breakdown voltage temperature

coefficient

ID=250uA, referenced to 25oC

0.91

V/oC

IDSS

Drain to source leakage current

VDS=900V, VGS=0V

1

uA

VDS=720V, TC=125oC

50

uA

I

GSS

Gate to source leakage current, forward

VGS=30V, VDS=0V

100

nA

Gate to source leakage current, reverse

VGS=-30V, VDS=0V

-100

nA

On characteristics

VGS(TH)

Gate threshold voltage

VDS=VGS, ID=250uA

3.0

5.0

V

RDS(ON)

Drain to source on state resistance

VGS=10V, ID = 3A

1.8

2.3

Ω

Gfs

Forward Transconductance

VDS = 40 V, ID = 3 A

6

S

Dynamic characteristics

Ciss

Input capacitance

VGS=0V, VDS=25V, f=1MHz

1400

pF

Coss

Output capacitance

120

Crss

Reverse transfer capacitance

35

td(on)

Turn on delay time

VDS=450V, ID=6A, RG=25Ω

(note 4，5)

23

50

ns

tr

Rising time

26

60

td(off)

Turn off delay time

58

120

tf

Fall time

24

50

Qg

Total gate charge

VDS=720V, VGS=10V, ID=6A

(note 4，5)

40

90

nC

Qgs

Gate-source charge

8

Qgd

Gate-drain charge

19

Source to drain diode ratings characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IS

Continuous source current

Integral reverse p-n Junction

diode in the MOSFET

6.0

A

ISM

Pulsed source current

24.0

A

VSD

Diode forward voltage drop.

IS=6.0A, VGS=0V

1.5

V

Trr

Reverse recovery time

IS=6.0A, VGS=0V,

dIF/dt=100A/us

436

ns

Qrr

Reverse recovery Charge

5.2

uC

※. Notes

1.

Repeatitive rating : pulse width limited by junction temperature.

2.

L = 30mH, IAS = 6.0A, VDD = 50V, RG=25Ω, Starting TJ = 25oC

3.

ISD ≤ 6.0A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC

4.

Pulse Test : Pulse Width

≤ 300us, duty cycle ≤ 2%

5.

Essentially independent of operating temperature.

SW6N90

SAMWIN

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