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IRF8301MTRPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF8301MTRPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page DirectFET Power MOSFET Description The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8301MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses and very high current carrying capability make this product ideal for power tools. Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate Voltage Typical values (unless otherwise specified) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage DirectFET ISOMETRIC MT l Ultra-low R DS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra-low Package Inductance l Optimized for high speed switching or high current switch (Power Tool) l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques SQ SX ST MQ MX MT MP 0 102030405060 QG, Total Gate Charge (nC) 0.0 1.0 2.0 3.0 4.0 5.0 VDS= 24V VDS= 15V ID= 25A VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.3m Ω@10V 1.9mΩ@ 4.5V www.irf.com © 2013 International Rectifier September 6, 2013 1 StrongIRFET IRF8301MTRPbF Absolute Maximum Ratings Parameter Units VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 25 Max. 27 192 250 ±20 34 260 0 5 10 15 20 VGS, Gate -to -Source Voltage (V) 0 1 2 3 4 5 6 ID = 32A TJ = 25°C TJ = 125°C Ordering Information Orderable Part Number Form Quantity IRF8301MPbF DirectFET MT Tape and Reel 4800 IRF8301MTRPbF Base Part Number Package Type Standard Pack |
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