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IRF8301MTRPBF Datasheet(PDF) 1 Page - International Rectifier

Part # IRF8301MTRPBF
Description  DirectFETPower MOSFET
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF8301MTRPBF Datasheet(HTML) 1 Page - International Rectifier

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DirectFET
™ Power MOSFET ‚
Description
The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF8301MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses and very high current carrying capability make this product ideal for power tools.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
DirectFET
™ ISOMETRIC
MT
l Ultra-low R
DS(on)
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible

l Ultra-low Package Inductance
l Optimized for high speed switching or high current
switch (Power Tool)
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques

SQ
SX
ST
MQ
MX
MT
MP
0
102030405060
QG, Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
VDS= 24V
VDS= 15V
ID= 25A
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.3m
Ω@10V 1.9mΩ@ 4.5V
www.irf.com © 2013 International Rectifier
September 6, 2013
1
StrongIRFET
IRF8301MTRPbF
Absolute Maximum Ratings
Parameter
Units
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
25
Max.
27
192
250
±20
34
260
0
5
10
15
20
VGS, Gate -to -Source Voltage (V)
0
1
2
3
4
5
6
ID = 32A
TJ = 25°C
TJ = 125°C
Ordering Information
Orderable Part Number
Form
Quantity
IRF8301MPbF
DirectFET MT
Tape and Reel
4800
IRF8301MTRPbF
Base Part Number
Package Type
Standard Pack


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