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AUIRLR024ZTRR Datasheet(PDF) 1 Page - International Rectifier |
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AUIRLR024ZTRR Datasheet(HTML) 1 Page - International Rectifier |
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1 / 14 page  AUIRLR024Z AUIRLU024Z HEXFET® Power MOSFET 01/16/12 www.irf.com 1 PD - 97753 AUTOMOTIVE GRADE Features ● Logic Level ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive ava- lanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. S D G Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited) d mJ EAS (tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units RJC Junction-to-Case j ––– 4.28 RJA Junction-to-Ambient (PCB mount) i ––– 40 °C/W RJA Junction-to-Ambient ––– 110 -55 to + 175 300 35 0.23 ± 16 25 25 See Fig.12a, 12b, 15, 16 Max. 16 11 64 GD S Gate Drain Source D-Pak AUIRLRU024Z I-Pak AUIRLU024Z G D S G D S V(BR)DSS 55V RDS(on) typ. 46m max. 58m ID 16A |
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