AUIRLL2705

01/23/12

www.irf.com

1

PD- 97756

Features

l

Advanced Planar Technology

l

Low On-Resistance

l

Dynamic dv/dt Rating

l

150°C Operating Temperature

l

Fast Switching

l

Fully Avalanche Rated

l

Repetitive Avalanche Allowed up to

Tjmax

l

Lead-Free, RoHS Compliant

l

Automotive Qualified*

Description

Specifically designed for Automotive applications, this

cellular design of HEXFET® Power MOSFETs utilizes

the latest processing techniques to achieve low on-

resistance per silicon area. This benefit combined

with the fast switching speed and ruggedized device

design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient

and reliable device for use in Automotive and a wide

variety of other applications.

SOT-223

AUIRLL2705

D

G

D

S

GD

S

Gate

Drain

Source

S

D

G

*Qualification standards can be found at http://www.irf.com/

55V

0.04



3.8A

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Parameter

Units

A

Pulsed Drain Current

™

Linear Derating Factor (PCB Mount)

g

mW/°C

Gate-to-Source Voltage

V

Single Pulse Avalanche Energy (Thermally Limited)

d

mJ

Avalanche Current

Ù

A

Repetitive Avalanche Energy

™g

mJ

dv/dt

Peak Diode Recovery dv/dt

e

V/ns

Operating Junction and

Storage Temperature Range

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Ambient (PCB mount, steady state)

g

93

120

°C/W

Junction-to-Ambient (PCB mount, steady state)

h

48

60

W

°C

2.1

0.10

110

3.8

Max.

5.2

3.0

30

3.8

-55 to + 150

1.0

8.3

± 16

7.5