AUIRL7766M2TR1 datasheet(7/11 Pages) IRF

Part #	AUIRL7766M2TR1

Description	Automotive DirectFETPower MOSFET

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Manufacturer	IRF [International Rectifier]

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AUIRL7766M2TR/TR1

www.irf.com

7

Fig 17. Maximum Avalanche Energy vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 16, 17:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of Tjmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 18a, 18b.

4. PD (ave) = Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. Iav = Allowable avalanche current.

7.

ΔT = Allowable rise in junction temperature, not to exceed

Tjmax (assumed as 25°C in Figure 16, 17).

tav = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

ZthJC(D, tav) = Transient thermal resistance, see figure 15)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Iav = 2DT/ [1.3·BV·Zth]

EAS (AR) = PD (ave)·tav

Fig 18b. Unclamped Inductive Waveforms

Fig 18a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

Fig 19a. Gate Charge Test Circuit

Fig 19b. Gate Charge Waveform

VDS

90%

10%

VGS

td(on)

tr

td(off) tf

Fig 20a. Switching Time Test Circuit

Fig 20b. Switching Time Waveforms

Vds

Vgs

Id

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

RG

IAS

0.01

Ω

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

VGS

1K

VCC

DUT

0

L

S

20K

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

RG

D.U.T.

10V

+

-

VDD

25

50

75

100

125

150

175

Starting TJ , Junction Temperature (°C)

0

10

20

30

40

50

60

70

TOP

Single Pulse

BOTTOM 1.0% Duty Cycle

ID = 31A

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