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PRN111162201JR Datasheet(PDF) 1 Page - California Micro Devices Corp |
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PRN111162201JR Datasheet(HTML) 1 Page - California Micro Devices Corp |
1 / 3 page © 2000 California Micro Devices Corp. All rights reserved. 7/14/2000 1 PRN101/111 CALIFORNIA MICRO DEVICES 215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com Bussed Resistor Network Features • Stable resistor network • High speed termination network • 15 or 23 terminating lines/package • Saves board space and reduces assembly cost Product Description CAMDs PRN101/111 Bussed Resistor Termination Networks offer high integration and performance in a miniature QSOP or SOIC package, which saves critical board area and provides manufacturing cost and reliability efficiencies. This part is well-suited as a general purpose replacement for all popular MLCC resistor chips and larger size thick film technology packages. Why thin film resistor networks? A terminating resistor is used to reduce or eliminate unwanted reflections on a Applications • Parallel termination • Pull up/pull down • Digital pulse squaring • Coding and decoding • Telemetry C1110600 SCHEMATIC CONFIGURATION transmission line or in some cases provide DC pull-up/ pull-down. It can perform this function only when its resistance value is closely matched to the characteristic impedance of the transmission line. The resistors used for terminating transmission lines must be noiseless, stable, and functional at high frequencies. Unlike thin film-based resistor networks, conventional thick film resistors used for this purpose are not as stable over temperature and time, and may have functional limita- tions when used in high frequency applications. 20 21 22 23 24 19 18 17 16 16 15 15 14 14 13 13 12 11 1 1 1 1 2 2 3 3 4 4 5 9 5 6 10 6 7 11 7 8 12 8 9 10 R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R R Type RB: S N O I T A C I F I C E P S D R A D N A T S R C Tm p p 0 5 2 ± * R C T Tm p p 5 ± e g n a R e r u t a r e p m e T g n i t a r e p OC ° 0 7 o t C ° 0 r o t s i s e R / g n i t a R r e w o P K 1 < R r o f W m 0 0 1 Ω R r o f W m 5 2 ≥ K 1 Ω e c n a t s i s e R n o i t a l u s n I m u m i n i MM 0 0 0 , 0 1 Ω e r u t a r e p m e T e g a r o t SC ° 0 5 1 + o t C ° 5 6 – g n i t a R r e w o P e g a k c a P. x a m , W 1 S E U L A V D R A D N A T S ( R Ω Ω Ω Ω Ω) d e t a l o s I e d o C ( R Ω Ω Ω Ω Ω) d e t a l o s I e d o C 1 50 R 1 5K 2 . 21 0 2 2 6 50 R 6 5K 7 . 21 0 7 2 0 3 30 0 3 3K 7 . 4 1 0 7 4 0 9 30 0 9 3K 8 . 6 1 0 8 6 0 8 60 0 8 6K 0 1 2 0 0 1 K 11 0 0 1K 0 22 0 0 2 K 1 . 11 0 1 1K 7 42 0 7 4 K 21 0 0 2 S N O I T A C I F I C E P S D R A D N A T S - N O N ) R ( e c n a r e l o T e t u l o s b A% 1 ± , % 2 ± S E U L A V D R A D N A T S - N O N e g n a R e c n a t s i s e RK 7 4 o t 0 1 Ω |
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