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AUIRFP2602 Datasheet(PDF) 1 Page - International Rectifier |
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AUIRFP2602 Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 11/17/11 PD - 96420 HEXFET® Power MOSFET Description AUIRFP2602 S D G GD S G a te D rain S ourc e Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. AUTOMOTIVE GRADE Features l Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-247AD S D G D HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ V(BR)DSS 24V RDS(on) typ. 1.25mΩ max. 1.6mΩ ID (Silicon Limited) 380A j ID (Package Limited) 180A Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally limited) d mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case i ––– 0.40 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient (PCB Mount, steady state) i ––– 40 300 (1.6mm from case ) 10 lbf yin (1.1Nym) Max. 380 j 270 j 1580 180 -55 to + 175 1011 400 See Fig.17a, 17b, 14, 15 380 2.5 ± 20 |
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