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AUIRFP2602 Datasheet(PDF) 1 Page - International Rectifier

Part # AUIRFP2602
Description  HEXFET짰 Power MOSFET
Download  10 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

AUIRFP2602 Datasheet(HTML) 1 Page - International Rectifier

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www.irf.com
1
11/17/11
PD - 96420
HEXFET® Power MOSFET
Description
AUIRFP2602
S
D
G
GD
S
G a te
D rain
S ourc e
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
AUTOMOTIVE GRADE
Features
l
Advanced Process Technology
l
Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features combine
to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
TO-247AD
S
D
G
D
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V(BR)DSS
24V
RDS(on) typ.
1.25mΩ
max. 1.6mΩ
ID (Silicon Limited) 380A j
ID (Package Limited) 180A
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
™
PD @TC = 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally limited)
d
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
Ù
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
i
–––
0.40
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient (PCB Mount, steady state)
i
–––
40
300 (1.6mm from case )
10 lbf
yin (1.1Nym)
Max.
380
j
270
j
1580
180
-55 to + 175
1011
400
See Fig.17a, 17b, 14, 15
380
2.5
± 20


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