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FQB5N90 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQB5N90 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page November 2013 Thermal Characteristics FQB5N90 N-Channel QFET® MOSFET 900 V, 5.4 A, 2.3 Ω Description ©2008 Fairchild Semiconductor Corporation FQB5N90 Rev. C1 www.fairchildsemi.com 1 This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 5.4 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V, ID = 2.7 A • Low Gate Charge (Typ. 31 nC) • Low Crss (Typ. 13 pF) • 100% Avalanche Tested Absolute Maximum Ratings T C = 25°C unless otherwise noted. Symbol Parameter FQB5N90TM Unit RJC Thermal Resistance, Junction to Case, Max. 0.79 oC/W RJA Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5 Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 40 G S D D2-PAK G S D • RoHS Compliant Symbol Parameter FQB5N90TM Unit VDSS Drain-Source Voltage 900 V ID Drain Current 5.4 A - Continuous (TC = 25°C) - Continuous (TC = 100°C) 3.42 A IDM Drain Current - Pulsed (Note 1) 21.6 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 660 mJ IAR Avalanche Current (Note 1) 5.4 A EAR Repetitive Avalanche Energy (Note 1) 15.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TA = 25°C) * 3.13 W Power Dissipation (TC = 25°C) 158 W - Derate above 25°C 1.27 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering, 1/8" from case for 5 seconds 300 °C |
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