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IRGP30B60KD-EP Datasheet(PDF) 2 Page - International Rectifier |
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IRGP30B60KD-EP Datasheet(HTML) 2 Page - International Rectifier |
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2 / 13 page  IRGP30B60KD-EP 2 www.irf.com Notes: Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V CC = 80% (VCES), VGE = 15V, L = 28µH, RG = 22Ω. Energy losses include "tail" and diode reverse recovery. 22 Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ––– 102 153 IC = 30A Qge Gate - Emitter Charge (turn-on) ––– 14 21 nC VCC = 400V Qgc Gate - Collector Charge (turn-on) ––– 44 66 VGE = 15V Eon Turn-On Switching Loss ––– 350 620 µJ IC = 30A, VCC = 400V Eoff Turn-Off Switching Loss ––– 825 955 VGE =15V, RG = 10Ω, L=200µH, Etot Total Switching Loss ––– 1175 1575 LS = 150nH TJ = 25°C td(on) Turn-On Delay Time ––– 46 60 IC = 30A, VCC = 400V tr Rise Time ––– 28 39 VGE = 15V, RG = 10Ω L =200µH td(off) Turn-Off Delay Time ––– 185 200 ns LS = 150nH, TJ = 25°C tf Fall Time ––– 31 40 Eon Turn-On Switching Loss ––– 635 1085 IC = 30A, VCC = 400V Eoff Turn-Off Switching Loss ––– 1150 1350 µJ VGE = 15V,RG = 10Ω, L =200µH Etot Total Switching Loss ––– 1785 2435 LS = 150nH TJ = 150°C td(on) Turn-On Delay Time ––– 46 60 IC = 30A, VCC = 400V tr Rise Time ––– 28 39 VGE = 15V, RG = 10Ω L =200µH td(off) Turn-Off Delay Time ––– 205 235 ns LS = 150nH, TJ = 150°C tf Fall Time ––– 32 42 Cies Input Capacitance ––– 1750 ––– VGE = 0V Coes Output Capacitance ––– 160 ––– pF VCC = 30V Cres Reverse Transfer Capacitance ––– 60 ––– f = 1.0MHz TJ = 150°C, IC = 120A, Vp =600V VCC = 500V, VGE = +15V to 0V, TJ = 150°C, Vp =600V, RG = 10Ω VCC = 360V, VGE = +15V to 0V Erec Reverse Recovery energy of the diode ––– 925 1165 µJ TJ = 150°C trr Diode Reverse Recovery time ––– 125 ––– ns VCC = 400V, IF = 30A, L = 200µH Irr Diode Peak Reverse Recovery Current ––– 43 48 A VGE = 15V,RG = 10Ω, L S = 150nH Switching Characteristics @ TJ = 25°C (unless otherwise specified) RBSOA Reverse Bias Safe Operting Area FULL SQUARE SCSOA Short Circuit Safe Operting Area 10 ––– ––– Ref.Fig. 23 CT.1 CT.4 CT.4 13,15 WF1,WF2 4 CT.2 CT.3 WF.4 17,18,19 20,21 CT.4,WF.3 CT.4 RG=10 Ω CT.4 14,16 WF1,WF2 µs Ref.Fig. 5,6,7 9,10,11 9,10,11 12 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 500µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.4 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C) VCE(on) Collector-to-Emitter Saturation Voltage ––– 1.95 2.35 V IC = 30A, VGE = 15V ––– 2.40 2.75 IC = 30A,VGE = 15V, TJ = 150°C VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) gfe Forward Transconductance ––– 18 ––– S VCE = 50V, IC = 50A, PW=80µs ICES Zero Gate Voltage Collector Current ––– 5.0 250 µA VGE = 0V, VCE = 600V ––– 1000 2000 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop ––– 1.30 1.55 V IF = 30A ––– 1.25 1.50 IF = 30A TJ = 150°C IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V 8 |
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