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IRG7PH35U-EP Datasheet(PDF) 6 Page - International Rectifier

Part # IRG7PH35U-EP
Description  INSULATED GATE BIPOLAR TRANSISTOR
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG7PH35U-EP Datasheet(HTML) 6 Page - International Rectifier

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IRG7PH35UPbF/IRG7PH35U-EP
6
www.irf.com
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 20A; L = 2.4mH
Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/Ri
Ci=
τi/Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
Ri (°C/W)
τi (sec)
0.017
0.000013
0.218
0.000141
0.299
0.002184
0.177
0.013107
Fig. 19 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
0
20406080
100
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VCES = 600V
VCES = 400V
25
50
75
100
125
150
175
TJ , Temperature (°C)
0.4
0.6
0.8
1.0
IC = 600μA


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