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V23990-K243-A-T1-14 Datasheet(PDF) 3 Page - Vincotech |
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V23990-K243-A-T1-14 Datasheet(HTML) 3 Page - Vincotech |
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3 / 13 page  V23990-K243-A-PM target datasheet MiniSKiiP 2nd Gen. PIM Size 3, 600V / 100A V23990-K243-A-00-14 Characteristic values Description Symbol Conditions Unit T(C°) Other conditions VGE(V) VR(V) VCE(V) IC(A) IF(A) (Rgon-Rgoff) VGS(V) VDS(V) Id(A) Min Typ Max Input Rectifier Bridge Gleichrichter Forward voltage VF Tj=25°C 35 0,8 1,02 1,35 V Durchlaßpannung Tj=125°C 0,94 Threshold voltage (for power loss calc. only) Vto Tj=25°C 0,88 V Schleusenspannung Tj=125°C 35 0,75 Slope resistance (for power loss calc. only) rt Tj=25°C 0,004 Ohm Ersatzwiderstand Tj=125°C 35 0,006 Reverse current Ir Tj=25°C 1500 0 0,1 mA Sperrstrom Tj=140±10°C 1500 0 2 Thermal resistance chip to heatsink per chip Wärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal grease thickness50um 1,14 K/W Thermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip RthJC Warmeleitpaste Dicke50um = 0,61 W/mK 0,75 K/W Transistor Inverter Transistor Wechselrichter Gate emitter threshold voltage VGE(th) Tj=25°C VCE=VGE 0,002 4 5,8 8 V Gate-Schwellenspannung Tj=125°C Collector-emitter saturation voltage VCE(sat) Tj=25°C 100 1,3 1,5 2,15 V Kollektor-Emitter Sättigungsspannung Tj=125°C 1,65 Collector-emitter cut-off current incl. Diode ICES Tj=25°C 0 600 0,75 mA Kollektor-Emitter Reststrom Tj=125°C Gate-emitter leakage current IGES Tj=25°C 20 0 900 nA Gate-Emitter Reststrom Tj=125°C Integrated Gate resistor Rgint - Ohm Integrirter Gate Widerstand Turn-on delay time td(on) Tj=25°C Rgoff= 6 Ohm ns Einschaltverzögerungszeit Tj=125°C Rgon= 6 Ohm ±15 300 100 75 Rise time tr Tj=25°C Rgoff= 6 Ohm ns Anstiegszeit Tj=125°C Rgon= 6 Ohm ±15 300 100 28 Turn-off delay time td(off) Tj=25°C Rgoff= 6 Ohm ns Abschaltverzögerungszeit Tj=125°C Rgon= 6 Ohm ±15 300 100 260 Fall time tf Tj=25°C Rgoff= 6 Ohm ns Fallzeit Tj=125°C Rgon= 6 Ohm ±15 300 100 75 Turn-on energy loss per pulse Eon Tj=25°C Rgoff= 6 Ohm mWs Einschaltverlustenergie pro Puls Tj=125°C Rgon= 6 Ohm ±15 300 100 1,1 Turn-off energy loss per pulse Eoff Tj=25°C Rgoff= 6 Ohm mWs Abschaltverlustenergie pro Puls Tj=125°C Rgon= 6 Ohm ±15 300 100 3 Input capacitance Cies Tj=25°C f=1MHz 0 25 6,2 nF Eingangskapazität Tj=125°C Output capacitance Coss Tj=25°C f=1MHz 0 25 0,4 nF Ausgangskapazität Tj=125°C Reverse transfer capacitance Crss Tj=25°C f=1MHz 0 25 0,2 nF Rückwirkungskapazität Tj=125°C Gate charge QGate Tj=25°C Rgoff= 6 Ohm nC Gate Ladung Tj=125°C Rgon= 6 Ohm ±15 300 100 850 Thermal resistance chip to heatsink per chip Wärmewiderstand Chip-Kühlkörper pro Chip R thJH Thermal grease thickness50um 0,8 K/W Thermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip RthJC Warmeleitpaste Dicke50um = 0,61 W/mK 0,5 K/W Diode Inverter Diode Wechselrichter Diode forward voltage VF Tj=25°C 100 1 1,65 2,6 V Durchlaßspannung Tj=125°C 1,7 Peak reverse recovery current IRM Tj=25°C Rgon= 6 Ohm $ Rückstromspitze Tj=125°C diF/dt = 4900 A/us -15 300 100 130 Reverse recovery time trr Tj=25°C Rgon= 6 Ohm ns Sperreverzögerungszeit Tj=125°C diF/dt = 4900 A/us -15 300 100 145 Reverse recovered charge Qrr Tj=25°C Rgon= 6 Ohm uC Sperrverzögerungsladung Tj=125°C diF/dt = 4900 A/us -15 300 100 7,5 Reverse recovered energy Erec Tj=25°C Rgon= 6 Ohm mWs Sperrverzögerungsenergie Tj=125°C diF/dt = 4900 A/us -15 300 100 1,9 Thermal resistance chip to heatsink per chip Wärmewiderstand Chip-Kühlkörper pro Chip R thJH Thermal grease thickness50um 1,15 K/W Thermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip RthJC Warmeleitpaste Dicke50um = 0,61 W/mK 0,75 K/W Values MiniSKiiP is a trademark of SEMIKRON. SEMIKRON is a trademark. Tyco is a trademark. copyright by Tyco Electronics Finsinger Feld 1, D-85521 Ottobrunn Page3 Copyright by Vincotech Revision:1 |
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