◎ SEMIHOW REV.A0,Nov 2010

Thermal Resistance Characteristics

Maximum Ratings

TO-220AB

Symbol

Parameter

Value

Units

03

035

04

045

05

06

V

RRM

Peak Repetitive Reverse Voltage

30

35

40

45

50

60

V

V

RWM

Working Peak Reverse Voltage

V

R

DC Blocking Voltage

V

R(RMS)

R.M.S Reverse Voltage

21

25

28

32

35

42

V

I

F(AV)

Average Rectifier Forward Current

- Total Device (Rated V

5.0

A

10

A

I

FM

Peak Repetitive Forward Current

(Rate V

10

A

I

FSM

Non-Repetitive Peak Surge Current (Surge applied at

rate load conditions half ware, single phase, 60Hz)

125

A

T

Operating and Storage Temperature Range

-65 to +150

℃

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Case

--

4.2

℃/W

Symbol

Parameter

Value

Units

03

035

04

045

05

06

V

F

Maximum Instantaneous Forward Voltage

- ( IF =5.0 Amp TC = 25℃)

- ( IF =5.0 Amp TC = 100℃)

0.55

0.47

0.65

0.55

V

I

R

Maximum Instantaneous Reverse Current

- ( Rated DC Voltage, TC = 25℃)

- ( Rated DC Voltage, TC = 125℃)

0.5

20

mA

Electrial Characteristics

 Low Forward Voltage.

 Low Switching noise.

 High Current Capacity

 Guarantee Reverse Avalanche.

 Guard-Ring for Stress Protection.

 Low Power Loss & High efficiency.

 150℃ Operating Junction Temperature

 Low Stored Charge Majority Carrier Conduction.

 Plastic Material used Carries Underwriters Laboratory

 Flammability Classification 94V-O

 ESD: 8KV(Min.) Human-Body Model

 In compliance with EU RoHs 2002/95/EC directives

FEATURES

HDP10A03x Thru HDP10A06x

Schottky Barrier Rectifiers

Using the Schottky Barrier principle with a Molybdenum barrier metal.

These state-of-the-art geometry features epitaxial construction with oxide

passivation and metal overlay contact. Ideally suited for low voltage, high

frequency rectification, or as free wheeling and polarity protection diodes.

30-60 VOLTS

10 AMPERES

2

1

3

JAN 2010