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2N6546 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2N6546 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N6546 2N6547 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N6546 300 VCEO(SUS) Collector-emitter sustaining voltage 2N6547 IC=100mA ; IB=0 400 V VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=2A 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=3A 5.0 V VBEsat Base-emitter saturation voltage IC=10A ;IB=2A 1.6 V 2N6546 VCE=650V; VBE(off)=1.5V TC=100 1.0 4.0 mA ICEV Collector cut-off current 2N6547 VCE=850V ;VBE(off)=1.5V TC=100 1.0 4.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 1.0 mA hFE-1 DC current gain IC=5A ; VCE=2V 12 60 hFE-2 DC current gain IC=10A ; VCE=2V 6 30 fT Transition frequency IC=0.5A ; VCE=10V;f=1MHz 6 35 MHz Switching times td Delay time 0.05 µs tr Rise time 1.0 µs tstg Storage time 4.0 µs tf Fall time IC=10A; IB1=-IB2=2.0A VCC=250V; tp=0.1ms; Duty CycleD2.0% 0.8 µs THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 1.0 /W |
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