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2N5970 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2N5970 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N5970 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 60 V VCEsat-1 Collector-emitter saturation voltge IC=7A ;IB=0.7A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=3.75A 4.0 V VBEsat Base-emitter saturation voltage IC=15A; IB=3.75A 2.5 V ICEO Collector cut-off current VCE=30V; IB=0 1.0 mA ICEV Collector cut-off current VCE=80V; VBE(off)=1.5V TC=150 0.5 5.0 mA ICBO Collector cut-off current VCB=80V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=5A ; VCE=1.5V 20 60 hFE-2 DC current gain IC=15A ; VCE=4V 4 fT Transition frequency IC=1A;VCE=10V 4 MHz |
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