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2N5671 Datasheet(PDF) 1 Page - Savantic, Inc. |
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2N5671 Datasheet(HTML) 1 Page - Savantic, Inc. |
1 / 3 page SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5671 2N5672 DESCRIPTION ·With TO-3 package ·High current ,high speed APPLICATIONS ·Intended for high current and fast switching industrial applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5671 120 VCBO Collector-base voltage 2N5672 Open emitter 150 V 2N5671 90 VCEO Collector-emitter voltage 2N5672 Open base 120 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 30 A IB Base current 10 A PD Total Power Dissipation TC=25 140 W Tj Junction temperature 200 Tstg Storage temperature -65~200 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.25 /W Fig.1 simplified outline (TO-3) and symbol |
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