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STS8550 Datasheet(PDF) 2 Page - KODENSHI_AUK CORP. |
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STS8550 Datasheet(HTML) 2 Page - KODENSHI_AUK CORP. |
2 / 3 page KST-9013-000 2 STS8550 Absolute maximum ratings (Ta=25 °°°°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -30 V Collector-Emitter voltage VCEO -25 V Emitter-Base voltage VEBO -6 V Collector current IC -800 mA Emitter current IE 800 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25 °°°°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BV CBO I C=-500µA, IE=0 -30 - - V Collector-Emitter breakdown voltage BV CEO I C=-1mA, IB=0 -25 - - V Collector cut-off current I CBO V CB=-15V, IE=0 - - -50 nA DC current gain h FE * V CE=-1V, IC=-50mA 85 - 300 - Collector-Emitter saturation voltage V CE(sat) I C=-500mA, IB=-50mA - - -0.5 V Base-Emitter voltage V BE V CE=-1V, IC=-500mA - - -1.2 V Transition frequency f T V CE=-5V, IC=-10mA - 120 - MHz Collector output capacitance C ob V CB=-10V, IE=0, f=1MHz - 19 - pF * : h FE Rank / B : 85~160, C : 120~200, D : 160~300 |
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