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2N5194 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2N5194 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors 2N5193 2N5194 2N5195 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N5193 -40 2N5194 -60 VCEO(SUS) Collector-emitter sustaining voltage 2N5195 IC=-0.1A; IB=0 -80 V VCEsat-1 Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.6 V VCEsat-2 Collector-emitter saturation voltage IC=-4A ;IB=-1A -1.2 V VBE Base-emitter on voltage IC=-1.5A ; VCE=-2V -1.2 V 2N5193 VCE=-40V; IB=0 2N5194 VCE=-60V; IB=0 ICEO Collector cut-off current 2N5195 VCE=-80V; IB=0 -1.0 mA 2N5193 VCB=-40V; IE=0 2N5194 VCB=-60V; IE=0 ICBO Collector cut-off current 2N5195 VCB=-80V; IE=0 -0.1 mA 2N5193 VCE=-40V; VBE(off)=-1.5V TC=125 -0.1 -2.0 2N5194 VCE=-60V; VBE(off)=-1.5V TC=125 -0.1 -2.0 ICEX Collector cut-off current 2N5195 VCE=-80V; VBE(off)=-1.5V TC=125 -0.1 -2.0 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA 2N5193 2N5194 25 100 hFE-1 DC current gain 2N5195 IC=-1.5A ; VCE=-2V 20 80 2N5193 2N5194 10 hFE-2 DC current gain 2N5195 IC=-4A ; VCE=-2V 7 fT Transition frequency IC=-1A ; VCE=-10V;f=1MHz 2 MHz |
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