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2N5191 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2N5191 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N5190 2N5191 2N5192 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N5190 40 2N5191 60 VCEO(SUS) Collector-emitter sustaining voltage 2N5192 IC=0.1A; IB=0 80 V VCEsat-1 Collector-emitter saturation voltage IC=1.5A ;IB=0.15A 0.6 V VCEsat-2 Collector-emitter saturation voltage IC=4A ;IB=1A 1.4 V VBE Base-emitter on voltage IC=1.5A ; VCE=2V 1.2 V 2N5190 VCE=40V; IB=0 2N5191 VCE=60V; IB=0 ICEO Collector cut-off current 2N5192 VCE=80V; IB=0 1.0 mA 2N5190 VCB=40V; IE=0 2N5191 VCB=60V; IE=0 ICBO Collector cut-off current 2N5192 VCB=80V; IE=0 0.1 mA 2N5190 VCE=40V; VBE(off)=1.5V TC=125 0.1 2.0 2N5191 VCE=60V; VBE(off)=1.5V TC=125 0.1 2.0 ICEX Collector cut-off current 2N5192 VCE=80V; VBE(off)=1.5V TC=125 0.1 2.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA 2N5190 2N5191 25 100 hFE-1 DC current gain 2N5192 IC=1.5A ; VCE=2V 20 80 2N5190 2N5191 10 hFE-2 DC current gain 2N5192 IC=4A ; VCE=2V 7 fT Transition frequency IC=1A ; VCE=10V;f=1MHz 2 MHz |
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