BS62UV4000PI datasheet(3/11 Pages) BSI

Part #	BS62UV4000PI

Description	Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit

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Manufacturer	BSI [Brilliance Semiconductor]

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Revision 2.4

April 2002

3

R0201-BS62UV4000

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/t

RC .

DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )

1. Vcc = 1.5V, TA = + 25OC

2. t

RC = Read Cycle Time

DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC )

BSI

LOW V

CC DATA RETENTION WAVEFORM ( CE Controlled )

CE

Data Retention Mode

Vcc

t CDR

Vcc

t R

VIH

Vcc

VDR

1.5V

≥

CE

Vcc - 0.2V

≥

BS62UV4000

SYMBOL

PARAMETER

TEST CONDITIONS

MIN.

TYP. (1)

MAX.

UNITS

VDR

Vcc for Data Retention

CE

Vcc - 0.2V

VIN

Vcc - 0.2V or VIN

0.2V

1.5

--

V

ICCDR

Data Retention Current

CE

Vcc - 0.2V

VIN

Vcc - 0.2V or VIN

0.2V

--

0.1

1

uA

tCDR

Chip Deselect to Data

Retention Time

0

--

ns

tR

Operation Recovery Time

See Retention Waveform

TRC

(2)

--

ns

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN. TYP. (1) MAX.

UNITS

VIL

Guaranteed Input Low

(2)

Voltage

V

-0.5

--

0.6

VIH

Guaranteed Input High

Voltage(2)

2.0

--

Vcc+0.2

V

IIL

Input Leakage Current

= 0V to Vcc

Vcc = Max, VIN

--

1

uA

IOL

Output Leakage Current

Vcc = Max, CE = VIH, or OE = VIH,

VI/O = 0V to Vcc

--

1

uA

VOL

Output Low Voltage

= 1mA

Vcc = Max, IOL

--

V

VOH

Output High Voltage

Vcc = Min, IOH = -0.5mA

1.6

--

V

ICC

Operating Power Supply

Current

mA

CE = VIL, IDQ = 0mA, F = Fmax(3)

--

15

ICCSB

Standby Current-TTL

IH

, IDQ = 0mA

mA

CE = V

--

1

ICCSB1

CE

VIN

Vcc-0.2V,

Vcc - 0.2V or VIN

0.2V

--

0.2

1.5

uA

Vcc = 2.0 V

Vcc = 3.0 V

Vcc = 2.0 V

Standby Current-CMOS

Vcc = 3.0 V

Vcc = 2.0 V

1

20

Vcc = 3.0 V

Vcc = 2.0 V

0.8

1.4

2.4

0.4

0.6

0.25

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