BS62LV4001EI datasheet(3/11 Pages) BSI

Part #	BS62LV4001EI

Description	Low Power/Voltage CMOS SRAM 512K X 8 bit

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Manufacturer	BSI [Brilliance Semiconductor]

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R0201-BS62LV4001

Revision 2.5

April 2002

3

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN. TYP. (1) MAX.

UNITS

Vcc=3.0V

VIL

Guaranteed Input Low

Voltage

(2)

Vcc=5.0V

-0.5

--

0.8

V

Vcc=3.0V

2.0

VIH

Guaranteed Input High

Voltage

(2)

Vcc=5.0V

2.2

--

Vcc+0.2

V

IIL

Input Leakage Current

Vcc = Max, VIN = 0V to Vcc

--

1

uA

IOL

Output Leakage Current

Vcc = Max, CE = VIH, or OE = VIH,

VI/O = 0V to Vcc

--

1

uA

Vcc=3.0V

VOL

Output Low Voltage

Vcc = Max, IOL = 2mA

Vcc=5.0V

--

0.4

V

Vcc=3.0V

VOH

Output High Voltage

Vcc = Min, IOH = -1mA

Vcc=5.0V

2.4

--

V

Vcc=3.0V

--

20

ICC

Operating Power Supply

Current

CE = VIL, IDQ = 0mA, F = Fmax

(3)

Vcc=5.0V

--

45

mA

Vcc=3.0V

--

1

ICCSB

Standby Current-TTL

CE = VIH, IDQ = 0mA

Vcc=5.0V

--

2

mA

Vcc=3.0V

--

0.25

1.5

ICCSB1

Standby Current-CMOS

CE

Vcc-0.2V,

VIN

Vcc - 0.2V or VIN

0.2V

Vcc=5.0V

--

1.5

15

uA

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/t

RC .

DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )

1. Vcc = 1.5V, TA = + 25OC

2. t

RC = Read Cycle Time

DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC )

BSI

LOW V

CC DATA RETENTION WAVEFORM ( CE Controlled )

CE

Data Retention Mode

Vcc

t CDR

Vcc

t R

VIH

Vcc

VDR

1.5V

≥

CE

Vcc - 0.2V

≥

BS62LV4001

SYMBOL

PARAMETER

TEST CONDITIONS

MIN.

TYP. (1)

MAX.

UNITS

VDR

Vcc for Data Retention

CE

Vcc - 0.2V

VIN

Vcc - 0.2V or VIN

0.2V

1.5

--

V

ICCDR

Data Retention Current

CE

Vcc - 0.2V

VIN

Vcc - 0.2V or VIN

0.2V

--

0.1

1

uA

tCDR

Chip Deselect to Data

Retention Time

0

--

ns

tR

Operation Recovery Time

See Retention Waveform

TRC

(2)

--

ns

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