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PSMG6008 Datasheet(PDF) 1 Page - Meder Electronic |
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PSMG6008 Datasheet(HTML) 1 Page - Meder Electronic |
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1 / 2 page  MOSFET Module PSMG 60/08 V DSS = 800 V I D25 = 60 A R DS(on) = 0.12 Ω Ω Ω Ω Ω t rr ≤≤≤≤≤ 250 ns Features • Package with DCB ceramic base plate • Isolation voltage 3000 V ∼ • Planar glass passivated chips • Low forward voltage drop • Leads suitable for PC board soldering • Low R DS(on) HDMOS TM process • Fast intrinsic Rectifier • UL registerd, E 148688 Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability • High power density • Small and light weight POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 2 2002 POWERSEM reserves the right to change limits, test conditions and dimensions Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 150 °C 800 V V DGR T J = 25 °C to 150 °C, RGS = 1 MΩ 800 V V GS continuous ±20 V V GSM transient ±30 V I D25 T Case = 25 °C 60 A I DM T Case = 25 °C, pulse width limited by TJM 240 A I AR 60 A E AR T C = 25 °C 64 mJ E AS T C = 25 °C 3 J dv/dt I S ≤ IDM, di/dt ≤ 100A/µs, VDD≤ VDSS, 5 V/ns T J ≤ 150 °C, RG = 2 Ω P D T Case = 25 °C 1200 W T J -55...+150 °C T JM +150 °C T stg -55...+150 °C V ISOL 50/60 Hz, RMS t = 1 min. 2500 V~ V ISOL I ISOL ≤ 1 mA t = 1 s 3000 V~ M d Mounting torque (M4) 1.5 Nm 14 lb.in. a max. allowed acceleration 50 m/s2 Weight 26 g Symbol Test Conditions Characteristic Values (T J = 25 °C, unless otherwise specified) V DSS V GS = 0 V, ID = 3 mA min. 800 V V DSS temperature coefficient typ. 0.096 %/K V GS(th) V GS = VDS, ID = 8 mA min. 3.0 V max. 5.0 V V GS(th) temperature coefficient typ. -0.214 %/K I GSS V DS = 0 V, VGS = ± 20 V max. ± 200 nA I DSS V DS = VDSS, T J = 25 °C max. 100 µA V GS = 0 V, T J = 125 °C max. 2 mA R DS(on) V GS = 10 V, ID = 0.5 . I D25 pulse test, t ≤ 300 µs, max. 0.12 Ω duty cycle d ≤ 2 % Preliminary Data Sheet MOSFET (data related to single chip) Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. G D S ATTENTION: All given data are derived from similar modules or estimated from chip data. Typical picture; changes of the pin configuration is reserved. |
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