BS616UV8021 datasheet(4/12 Pages) BSI

Part #	BS616UV8021

Description	Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable

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Manufacturer	BSI [Brilliance Semiconductor]

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Revision 2.2

April 2001

4

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN.

TYP.(1) MAX.

UNITS

VIL

Guaranteed Input Low

Voltage (2)

Vcc=2.0V

-0.5

--

0.6

V

VIH

Guaranteed Input High

Voltage (2)

Vcc=2.0V

1.4

--

Vcc+0.2

V

IIL

Input Leakage Current

Vcc = Max, VIN= 0V toVcc

--

1

uA

IOL

Output Leakage Current Vcc = Max, CE1 = V

OE = V , V = 0V to

IH

, or CE2 =ViL, or

IH

I/O

Vcc

--

1

uA

VOL

Output Low Voltage

= 1mA

Vcc= max, IOL

Vcc=2.0V

--

0.4

V

VOH

Output High Voltage

= -0.5mA

Vcc= Min, IOH

Vcc=2.0V

1.6

--

V

ICC

Operating Power Supply

Current

Vcc= max, CE1=VILand CE2 = VIH,

IDQ = 0mA, F =Fmax (3)

Vcc=2.0V

--

20

mA

ICCSB

Standby Current-TTL

Vcc= max, CE1 = V

I= 0mA

IH

or CE2 =VIL,

DQ

Vcc=2.0V

--

0.6

mA

I CCSB1

Standby Current

Vcc-0.2V,

0.2V;VIN Vcc - 0.2V or

VIN

0.2V

Vcc=2.0V

-CMOS

or CE2

Vcc= max,CE1

--

0.6

15

uA

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/ t

RC .

DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC)

BSI

BS616UV8021

R0201-BS616UV8021

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