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BS616UV8021 Datasheet(PDF) 2 Page - Brilliance Semiconductor |
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BS616UV8021 Datasheet(HTML) 2 Page - Brilliance Semiconductor |
2 / 12 page Revision 2.2 April 2001 2 Name Function A0-A18 Address Input These 19 address inputs select one of the 524,288 x 16-bit words in the RAM. SAE Address Input This address input incorporate with the above 19 address inputs select one of the 1,048,576 x 8-bit bytes in the RAM if the CIO is LOW. Don't use when CIO is HIGH. CIO x8/x16 select input This input selects the organization of the SRAM. 524,288 x 16-bit words configuration is selected if CIO is HIGH. 1,048,576 x 8-bit bytes configuration is selected if CIO is LOW. CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when data read from or write to the device. If either chip enable is not active, the device is deselected and is in a standby power mode. The DQ pins will be in the high impedance state when the device is deselected. WE Write Enable Input The write enable input is active LOW and controls read and write operations. With the chip selected, when WE is HIGH and OE is LOW, output data will be present on the DQ pins; when WE is LOW, the data present on the DQ pins will be written into the selected memory location. OE Output Enable Input The output enable input is active LOW. If the output enable is active while the chip is selected and the write enable is inactive, data will be present on the DQ pins and they will be enabled. The DQ pins will be in the high impedance state when OE is inactive. LB and UB Data Byte Control Input Lower byte and upper byte data input/output control pins. The chip is deselected when both LB and UB pins are HIGH. D0 - D15 Data Input/Output Ports These 16 bi-directional ports are used to read data from or write data into the RAM. Vcc Power Supply Gnd Ground PIN DESCRIPTIONS Preliminary Preliminary BSI BS616UV8021 R0201-BS616UV8021 |
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