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DP500P Datasheet(PDF) 2 Page - KODENSHI_AUK CORP. |
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DP500P Datasheet(HTML) 2 Page - KODENSHI_AUK CORP. |
2 / 3 page KST-7003-003 2 DP500P Absolute maximum ratings (Ta=25 ° C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -15 V Collector-Emitter voltage VCEO -12 V Emitter-Base voltage VEBO -5 V Collector current IC -1 A Collector dissipation PC 1.1 W Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25 ° C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, IE=0 -15 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -12 - - V Emitter-Base breakdown voltage BVEBO IE=-50µA, IC=0 -5 - - V Collector cut-off current ICBO VCB=-12V, IE=0 - - -0.1 µA Emitter cut-off current IEBO VEB=-5V, IC=0 - - -0.1 µA hFE1 VCE=-2V, IC=-500mA 160 - 320 - DC current gain hFE2 VCE=-2V, IC=-3A 40 - - - Collector-Emitter on voltage VCE(sat1) IC=-3A, IB=-150mA - - -0.5 V Base-Emitter on voltage VBE(sat) IC=-3A, IB=-150mA - - -1.2 V Transition frequency fT VCB=-5V, IC=-500mA - 150 - MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz - - 50 pF |
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