Revision 2.2

April 2001

7

R0201-BS616UV1010

(11)

(2)

(4,10)

(3)

D

IN

D

OUT

WE

CE

ADDRESS

(5)

(7)

(8)

(8,9)

LB,UB

BSI

BS616UV1010

NOTES:

1. WE must be high during address transitions.

2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals

must be active to initiate a write and any one signal can terminate a write by going inactive.

The data input setup and hold timing should be referenced to the second transition edge of

the signal that terminates the write.

4. During this period, DQ pins are in the output state so that the input signals of opposite phase

to the outputs must not be applied.

5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE

transition, output remain in a high impedance state.

9. If CE is low during this period, DQ pins are in the output state. Then the data input signals of

opposite phase to the outputs must not be applied to them.

10. Transition is measured

The parameter is guaranteed but not 100% tested.

12. The change of Read/Write cycle must accompany with CE or address toggled.

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