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BS616LV4023BC Datasheet(PDF) 3 Page - Brilliance Semiconductor

Part # BS616LV4023BC
Description  Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
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Manufacturer  BSI [Brilliance Semiconductor]
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Logo BSI - Brilliance Semiconductor

BS616LV4023BC Datasheet(HTML) 3 Page - Brilliance Semiconductor

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Revision 2.0
April 2002
3
MODE
CE1
CE2
OE
WE
CIO
LB
UB
SAE
D0~7
D8~15
VCC Current
HX
X
X
Fully Standby
XL
XX
X
XX
X
High-Z
High-Z
ICCSB, ICCSB1
Output Disable
L
H
H
H
X
X
X
X
High-Z
High-Z
ICC
L
H
Dout
High-Z
H
L
High-Z
Dout
Read from SRAM
( WORD mode )
LH
L
H
H
LL
X
Dout
Dout
ICC
LH
Din
X
HL
X
Din
Write to SRAM
( WORD mode )
LH
X
L
H
LL
X
Din
Din
ICC
Read from SRAM
( BYTE Mode )
L
H
L
H
L
X
X
A-1
Dout
High-Z
ICC
Write to SRAM
( BYTE Mode )
LH
X
L
L
X
X
A-1
Din
X
ICC
TRUTH TABLE
BSI
BS616LV4023
CIN
Input
Capacitance
VIN=0V
6
pF
CDQ
Input/Output
Capacitance
VI/O=0V
8
pF
RANGE
AMBIENT
TEMPERATURE
Vcc
Commercial
0 O C to +70 O C2.4V ~ 3.6V
Industrial
-40 O C to +85 O C2.4V ~ 3.6V
ABSOLUTE MAXIMUM RATINGS(1)
OPERATING RANGE
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
1. This parameter is guaranteed and not tested.
SYMBOL
PARAMETER
RATING
UNITS
VTERM
Terminal
Voltage
with
Respect to GND
-0.5 to
Vcc+0.5
V
TBIAS
Temperature Under Bias
-40 to +125
O C
TSTG
Storage Temperature
-60 to +150
O C
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
20
mA
R0201-BS616LV4023
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT


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