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BS616LV2018 Datasheet(PDF) 1 Page - Brilliance Semiconductor

Part # BS616LV2018
Description  Very Low Power/Voltage CMOS SRAM 128K X 16 bit
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Manufacturer  BSI [Brilliance Semiconductor]
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Logo BSI - Brilliance Semiconductor

BS616LV2018 Datasheet(HTML) 1 Page - Brilliance Semiconductor

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Revision 2.0
April 2002
1
R0201-BS616LV2018
Very Low Power/Voltage CMOS SRAM
128K X 16 bit
• Very low operation voltage : 2.4 ~ 3.6V
• Very low power consumption :
Vcc = 3.0V
C-grade: 16mA (Max.) operating current
I -grade: 20mA (Max.) operating current
0.1uA (Typ.) CMOS standby current
• High speed access time :
-70
70ns (Max.) at Vcc = 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
The BS616LV2018 is a high performance, very low power CMOS Static
Random Access Memory organized as 131,072 words by 16 bits and
operates from a wide range of 2.4V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.1uA and maximum access time of 70ns in 3V operation.
Easy
memory
expansion is
provided by active LOW chip
enable(CE), active LOW output enable(OE) and three-state output
drivers.
The BS616LV2018 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV2018 is available in DICE form, JEDEC standard 48-pin
TSOP Type I package and 48-ball BGA package.
DESCRIPTION
FEATURES
BLOCK DIAGRAM
PRODUCT FAMILY
PIN CONFIGURATIONS
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
Row
Decoder
Memory Array
1024 x 2048
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Buffer
Output
A3 A2 A1
Data
Buffer
Input
Control
Gnd
Vcc
OE
WE
CE
DQ15
DQ0
A16
A5
A6
A7
A15
A13
16
16
16
16
14
128
2048
1024
20
A14
A12
A9
A4
A0
A11
A8
Address
Input
Buffer
A10
Address Input Buffer
.
.
.
.
UB
.
.
.
.
LB
BS616LV2018
G
H
F
E
D
C
A9
A8
D15
D14
VSS
D9
D13
A12
A14
D12
D11
D10
A5
B
A
D8
LB
1
UB
OE
A3
A0
23
A11
A10
A13
A15
WE
D5
A16
A7
A6
D4
D3
D1
D7
D6
D2
A4
A1
A2
45
D0
6
N.C.
VCC
VSS
VCC
N.C.
CE
N.C.
N.C.
N.C.
N.C.
48-ball BGA top view
BSI
POWER DISSIPATION
SPEED
(ns)
STANDBY
(ICCSB1, Max)
Operating
(ICC, Max)
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
Vcc=
3.0V
Vcc=3.0V
Vcc=3.0V
PKG TYPE
BS616LV2018DC
DICE
BS616LV2018TC
TSOP1-48
BS616LV2018AC
0
O C to +70 O C70
0.7 uA
16
mA
BGA-48-0608
BS616LV2018DI
DICE
BS616LV2018TI
TSOP1-48
BS616LV2018AI
-40
O C to +85 O C
2.4V ~3.6V
70
1.5
uA
20
mA
BGA-48-0608


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