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BS616LV2018 Datasheet(PDF) 6 Page - Brilliance Semiconductor

Part # BS616LV2018
Description  Very Low Power/Voltage CMOS SRAM 128K X 16 bit
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Manufacturer  BSI [Brilliance Semiconductor]
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Revision 2.0
April 2002
6
R0201-BS616LV2018
AC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC , Vcc = 3.0V )
WRITE CYCLE
BSI
BS616LV2018
t WR
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE1 (1)
t WC
(3)
t CW
(11)
t BW
(2)
t WP
t AW
t OHZ
(4,10)
t AS
(3)
t DH
t DW
D
IN
D
OUT
WE
LB,UB
CE
OE
ADDRESS
(5)
JEDEC
PARAMETER
NAME
PARAMETER
NAME
DESCRIPTION
BS616LV2018-70
MIN. TYP. MAX.
t
AVAX
Write Cycle Time
t
WC
70
--
--
t
E1LWH
t
CW
Chip Select to End of Write
70
--
--
t
AVWL
t
AS
Address Setup Time
0--
--
t
AVWH
t
AW
Address Valid to End of Write
70
--
--
t
WLWH
t
WP
Write Pulse Width
35
--
--
t
WHAX
t
WR
Write recovery Time
(CE,WE)
0
--
--
t
BW
t
BW
Date Byte Control to End of Write
(LB,UB)
30
--
--
t
WLQZ
t
WHZ
Write to Output in High Z
0--
30
t
DVWH
t
DW
Data to Write Time Overlap
30
--
--
t
WHDX
t
DH
Data Hold from Write Time
0--
--
t
GHQZ
t
OHZ
Output Disable to Output in High Z
0--
30
t
WHOX
t
OW
End of Write to Output Active
5--
--
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1. tBW is 30ns (@speed=70ns) with address toggle. ; tBW is 70ns (@speed=70ns) without address toggle.
(1)
NOTE :


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