PSHI5006 datasheet(2/4 Pages) POWERSEM

Part #	PSHI5006

Description	IGBT Module H-Bridge Configuration

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Manufacturer	POWERSEM [Powersem GmbH]

Direct Link	http://www.powersem.com

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PSHI 50/06

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

 2002 POWERSEM reserves the right to change limits, test conditions and dimensions

Package style and outline

Dimensions in mm (1mm = 0.0394“)

Reverse diodes (FRED)

Symbol

Conditions

Maximum Ratings

I

F25

T

C = 25°C

30

A

I

F80

T

C = 80°C

19

A

Symbol

Conditions

Characteristic Values

min.

typ.

max.

V

F

I

F = 30 A;

T

VJ =

25°C

2.57

2.84

V

T

VJ = 125°C

1.8

V

I

RM

I

F = 15 A; diF/dt = 400 A/µs; TVJ = 125°C

7

A

t

rr

V

R = 300 V; VGE = 0 V

50

ns

R

thJC

2.3 K/W

R

thJH

with heatsink compound (0.42 K/m.K; 50 µm)

4.6

K/W

Module

Symbol

Conditions

Maximum Ratings

T

VJ

-40...+150

°C

T

stg

-40...+150

°C

V

ISOL

I

ISOL ≤ 1 mA; 50/60 Hz

3000

V~

M

d

Mounting torque (M4)

1.5 - 2.0

Nm

14 - 18

lb.in.

a

Max. allowable acceleration

50

m/s2

Symbol

Conditions

Characteristic Values

min. typ. max.

d

S

Creepage distance on surface (Pin to heatsink)

11.2

mm

d

A

Strike distance in air (Pin to heatsink)

11.2

mm

Weight

24

g

Temperature Sensor NTC

Symbol

Conditions

Characteristic Values

min. typ.

max.

R

25

T = 25°C

455

470

485 k

Ω

B

25/50

3474

K

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