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PSB19F04 Datasheet(PDF) 1 Page - Powersem GmbH

Part # PSB19F04
Description  Single Phase Rectifier Bridge (FRED)
Download  1 Pages
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Manufacturer  POWERSEM [Powersem GmbH]
Direct Link  http://www.powersem.com
Logo POWERSEM - Powersem GmbH

PSB19F04 Datasheet(HTML) 1 Page - Powersem GmbH

  PSB19F04 Datasheet HTML 1Page - Powersem GmbH  
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Single Phase
PSB 19F
I
dAV
= 27 A
Rectifier Bridge
V
RRM
= 400 - 600 V
with fast Recovery Epitaxial Diode (FRED)
trr
= 35 ns
Preliminary Data Sheet
Features
Package with DCB ceramic base plate
Isolation voltage 3000 V
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL registered, E 148688
Applications
Supplies for DC power equipment
Input and output rectifier for high
frequency
Battery DC power supplies
Field supply for DC motors
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
Low noise switching
Small and light weight
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Data according to IEC 60747 refer to a single diode unless otherwise stated
*- for resistive load at bridge output
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PACTM 1
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Symbol
Test Conditions
Maximum Ratings
I*
dAV
T
C = 85 °C,
(per module)
27
A
I
dAVM
90
A
I
FSM
T
VJ = 45 °C
t = 10 ms (50 Hz), sine
50
A
V
R = 0
t = 8.3 ms (60 Hz), sine
55
A
T
VJ = TVJM
t = 10 ms (50 Hz), sine
45
A
V
R = 0
t = 8.3 ms (60 Hz), sine
50
A
∫∫∫∫∫ i2 dt
T
VJ = 45 °C
t = 10 ms (50 Hz), sine
15
A²s
V
R = 0
t = 8.3 ms (60 Hz), sine
15
A²s
T
VJ = TVJM
t = 10 ms (50 Hz), sine
10
A²s
V
R = 0
t = 8.3 ms (60 Hz), sine
10
A²s
T
VJ
-40... + 150
°C
T
VJM
150
°C
T
stg
-40... + 125
°C
V
ISOL
50/60 Hz, RMS t = 1 min
3000
V
I
ISOL ≤ 1 mA
t = 1 s
3600
V
M
d
Mounting torque
(M4)
1.5 - 1.8
Nm
14 - 16
lb.in.
Weight
typ.
16
g
Symbol
Test Conditions
Characteristic Value
I
R
V
R = VRRM, TVJ = TVJM
0.25
mA
V
R = VRRM, TVJ = 25°C
0
.06
mA
V
F
I
F = 10 A,
T
VJ = 25 °C
2.09
V
V
TO
For power-loss calculations only
1.18
V
r
T
22
m
R
thJC
per diode; DC
2.5
K/W
per module
0.63
K/W
R
thJK
per diode; DC
2.8
K/W
per module
0.7
K/W
I
RM
I
F=12A; -diF/dt=100A/µs; VR=100V
typ. 4
A
L
=0.05 mH; T
VJ= 100°C
t
rr
I
F=1A; -diF/dt=50A/µs; VR=30V;
typ. 35
ns
T
VJ= 25°C
d
s
Creeping distance on surface
11.2
mm
d
A
Creeping distance in air
9.7
mm
a
Max. allowable acceleration
50
m/s²
~
A
K
~N
-
+
V
RSM
V
RRM
Type
V
DSM
V
DRM
(V)
(V)
400
400 PSB 19F/04
600
600 PSB 19F/06


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