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QIS2510001 Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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QIS2510001 Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
2 / 3 page 2 Preliminary QIS2510001 Single Discrete IGBT 100 Amperes/2500 Volts Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 01/10 Rev. 0 Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol QIS2510001 Units Collector Emitter Voltage VCES 2500 Volts Gate Emitter Voltage VGES ±20 Volts Collector Current (DC, TC = 127°C) IC 100 Amperes Peak Collector Current (Pulsed) ICM 200* Amperes Junction Temperature Tj -55 to 150 °C Storage Temperature Tstg -55 to 125 °C Mounting Torque, M5 Mounting Screws — 30 in-lb Weight (Typical) — 20 Grams Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C — 3.20 4.20** Volts IC = 100A, VGE = 15V, Tj = 125°C — 3.60 — Volts Total Gate Charge QG VCC = 1250V, IC = 100A, VGE = 15V — 450 — nC Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies — 10 — nF Output Capacitance Coes VGE = 0V, VCE = 10V — 1.1 — nF Reverse Transfer Capacitance Cres — 330 — pF Resistive Turn-on Delay Time td(on) VCC = 1250V, — — TBD µs Load Rise Time tr IC = 100A, — — TBD µs Switching Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, — — TBD µs Times Fall Time tf RG = 30Ω — — TBD µs Turn-on Switching Energy Eon Tj = 125°C, IC = 100A, VCC = 1250V, — 125 — mJ/P Turn-off switching Energy Eoff VGE = ±15V, RG = 30Ω, Inductive Load — 100 — mJ/P Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) IGBT — 0.10 TBD °C/W Thermal Resistance, Case to Sink Rth(c-s) λgrease = 1W/mK — 0.10 — °C/W Thermal Grease Applied * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed device rating. **Pulse width and repetition rate should be such that device junction temperature rise is negligible. |
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