2

Preliminary

QIS2510001

Single Discrete IGBT

100 Amperes/2500 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

01/10 Rev. 0

Maximum Ratings,

Ratings

Symbol

QIS2510001

Units

Collector Emitter Voltage

2500

Volts

Gate Emitter Voltage

±20

Volts

100

Amperes

Peak Collector Current (Pulsed)

200*

Amperes

Junction Temperature

-55 to 150

°C

Storage Temperature

-55 to 125

°C

Mounting Torque, M5 Mounting Screws

—

30

in-lb

Weight (Typical)

—

20

Grams

Static Electrical Characteristics,

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector Cutoff Current

—

—

1.0

mA

Gate Leakage Current

—

—

0.5

µA

Gate-Emitter Threshold Voltage

4.5

6.0

7.5

Volts

Collector-Emitter Saturation Voltage

—

3.20

4.20**

Volts

—

3.60

—

Volts

Total Gate Charge

—

450

—

nC

Dynamic Electrical Characteristics,

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Input Capacitance

—

10

—

nF

Output Capacitance

—

1.1

—

nF

Reverse Transfer Capacitance

—

330

—

pF

Resistive

Turn-on Delay Time

—

—

TBD

µs

Load

Rise Time

—

—

TBD

µs

Switching

Turn-off Delay Time

—

—

TBD

µs

Times

Fall Time

—

—

TBD

µs

Turn-on Switching Energy

—

125

—

mJ/P

Turn-off switching Energy

—

100

—

mJ/P

Thermal and Mechanical Characteristics,

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Thermal Resistance, Junction to Case

IGBT

—

0.10

TBD

°C/W

Thermal Resistance, Case to Sink

—

0.10

—

°C/W

Thermal Grease Applied

**Pulse width and repetition rate should be such that device junction temperature rise is negligible.