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NX3008PBKW Datasheet(PDF) 5 Page - NXP Semiconductors

Part # NX3008PBKW
Description  30 V, 200 mA P-channel Trench MOSFET
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

NX3008PBKW Datasheet(HTML) 5 Page - NXP Semiconductors

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NX3008PBKW
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 1 August 2011
5 of 16
NXP Semiconductors
NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from junction to ambient
in free air
[1] -
415
480
K/W
[2] -
350
400
K/W
Rth(j-sp)
thermal resistance from junction to solder point
-
-
150
K/W
FR4 PCB, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 1 cm2
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa028
tp (s)
10−3
102
103
10
1
10−2
10−1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
017aaa029
tp (s)
10−3
102
103
10
1
10−2
10−1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0


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