KSD-T0O044-004

2

SMK0765F

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

650

-

-

V

Gate threshold voltage

2.0

-

4.0

V

Drain-source cut-off current

-

-

1

uA

Gate leakage current

-

-

100

nA

Drain-source on-resistance

④

-

1.2

1.4



Forward transfer conductance

④

-

8.1

-

S

Input capacitance

Ciss

f=1MHz

-

1006

1258

pF

Output capacitance

Coss

-

98

123

Reverse transfer capacitance

Crss

-

10

15

Turn-on delay time

③④

-

18

-

ns

Rise time

-

19

-

Turn-off delay time

-

72

-

Fall time

-

28

-

Total gate charge

③④

-

21

27

nC

Gate-source charge

-

6

-

Gate-drain charge

-

5

-

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Source current (DC)

Integral reverse diode

in the MOSFET

-

-

7

A

Source current (Pulsed)

①

-

-

28

Forward voltage

④

-

-

1.4

V

Reverse recovery time

-

365

-

ns

Reverse recovery charge

-

3.4

-

uC

Note ;

①

Repetitive rating : Pulse width limited by maximum junction temperature

②

③

Pulse Test : Pulse width≤300us, Duty cycle≤2%

④

Essentially independent of operating temperature