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SMK0270D-1 Datasheet(PDF) 2 Page - KODENSHI_AUK CORP. |
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SMK0270D-1 Datasheet(HTML) 2 Page - KODENSHI_AUK CORP. |
2 / 8 page KSD-T6O011-001 2 SMK0270D Electrical Characteristics (T C=25°C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250uA, VGS=0 700 - - V Gate threshold voltage VGS(th) ID=250uA, VDS=VGS 2.0 - 4.0 V Drain-source cut-off current IDSS VDS=700V, VGS=0V - - 1 uA Gate leakage current IGSS VDS=0V, VGS=±30V - - ±100 nA Drain-source on-resistance ④ RDS(ON) VGS=10V, ID=1.0A - 4.8 6.3 Ω Forward transfer conductance ④ gfs VDS=10V, ID=1.0A - 2.5 - S Input capacitance Ciss - 395 494 Output capacitance Coss - 32 41 Reverse transfer capacitance Crss VGS=0V, VDS=25V, f=1MHz - 6 8 pF Turn-on delay time td(on) - 22 - Rise time tr - 10.5 - Turn-off delay time td(off) - 7 - Fall time tf VDD=300V, ID=2.0A RG=25Ω ③④ - 10.5 - ns Total gate charge Qg - 7.2 9.0 Gate-source charge Qgs - 2.5 - Gate-drain charge Qgd VDS=560V, VGS=10V ID=2.0A ③④ - 1.5 - nC Source-Drain Diode Ratings and Characteristics (T C=25°C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Source current (DC) IS - - 2.0 Source current (Pulsed) ① ISM Integral reverse diode in the MOSFET - - 8.0 A Forward voltage ④ VSD VGS=0V, IS=2.0A - - 1.4 V Reverse recovery time trr - 260 - ns Reverse recovery charge Qrr IS=2.0A, VGS=0V dIF/dt=100A/us - 1.09 - uC Note ; ① Repetitive rating : Pulse width limited by maximum junction temperature ② L=19mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ=25℃ ③ Pulse Test : Pulse width≤300us, Duty cycle≤2% ④ Essentially independent of operating temperature |
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