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PSS15S92E6-AG Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part # PSS15S92E6-AG
Description  Dual-In-Line Package Intelligent Power Module
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

PSS15S92E6-AG Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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< Dual-In-Line Package Intelligent Power Module >
PSS15S92F6-AG, PSS15S92E6-AG
TRANSFER MOLDING TYPE
INSULATED TYPE
Publication Date : October 2013
3
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
Limits
Unit
Min.
Typ.
Max.
VCE(sat)
Collector-emitter saturation
voltage
VD=VDB = 15V, VIN= 5V
IC= 15A, Tj= 25°C
-
1.70
2.05
V
IC= 15A, Tj= 125°C
-
1.90
2.25
IC=1.5A, Tj= 25°C
-
0.90
1.10
VEC
FWDi forward voltage
VIN= 0V, -IC= 15A
-
2.50
3.00
V
ton
Switching times
VCC= 300V, VD= VDB= 15V
IC= 15A, Tj= 125°C, VIN= 0
↔5V
Inductive Load (upper-lower arm)
0.65
1.05
1.45
μs
tC(on)
-
0.40
0.65
μs
toff
-
1.15
1.60
μs
tC(off)
-
0.15
0.30
μs
trr
-
0.30
-
μs
ICES
Collector-emitter cut-off
current
VCE=VCES
Tj= 25°C
-
-
1
mA
Tj= 125°C
-
-
10
CONTROL (PROTECTION) PART
Symbol
Parameter
Condition
Limits
Unit
Min.
Typ.
Max.
ID
Circuit current
Total of VP1-VNC, VN1-VNC
VD=15V, VIN=0V
-
-
2.80
mA
VD=15V, VIN=5V
-
-
2.80
IDB
Each part of VUFB-U,
VVFB-V, VWFB-W
VD=VDB=15V, VIN=0V
-
-
0.10
VD=VDB=15V, VIN=5V
-
-
0.10
VSC(ref)
Short circuit trip level
VD = 15V
(Note 3)
0.455
0.480
0.505
V
UVDBt
P-side Control supply
under-voltage protection(UV)
Tj
≤125°C
Trip level
7.0
10.0
12.0
V
UVDBr
Reset level
7.0
10.0
12.0
V
UVDt
N-side Control supply
under-voltage protection(UV)
Trip level
10.3
-
12.5
V
UVDr
Reset level
10.8
-
13.0
V
VOT
Temperature Output
(PSS**S92F6-AG)
Pull down R=5k
Ω (Note 4)
LVIC Temperature=90
°C
2.63
2.77
2.91
V
LVIC Temperature=25
°C
0.88
1.13
1.39
V
OTt
Over temperature protection
(OT, PSS**S92E6-AG) (Note5)
VD = 15V
Trip level
100
120
140
°C
OTrh
Detect LVIC temperature
Hysteresis of trip-reset
-
10
-
°C
VFOH
Fault output voltage
VSC = 0V, FO terminal pulled up to 5V by 10k
Ω
4.9
-
-
V
VFOL
VSC = 1V, IFO = 1mA
-
-
0.95
V
tFO
Fault output pulse width
(Note 6)
20
-
-
μs
IIN
Input current
VIN = 5V
0.70
1.00
1.50
mA
Vth(on)
ON threshold voltage
Applied between UP, VP, WP, UN, VN, WN-VNC
-
2.10
2.60
V
Vth(off)
OFF threshold voltage
0.80
1.30
-
Vth(hys)
ON/OFF threshold
hysteresis voltage
0.35
0.65
-
VF
Bootstrap Di forward voltage
IF=10mA including voltage drop by limiting resistor
(Note 7)
1.1
1.7
2.3
V
R
Built-in limiting resistance
Included in bootstrap Di
80
100
120
Ω
Note 3 : SC protection works only for N-side IGBT. Please select the external shunt resistance such that the SC trip-level is less than 1.7 times of the current rating.
Note 4 : DIPIPM don't shutdown IGBTs and output fault signal automatically when temperature rises excessively. When temperature exceeds the protective level that
user defined, controller (MCU) should stop the DIPIPM. Temperature of LVIC vs. VOT output characteristics is described in Fig. 3.
5 : When the LVIC temperature exceeds OT trip temperature level(OTt), OT protection works and Fo outputs. In that case if the heat sink dropped off or fixed
loosely, don't reuse that DIPIPM. (There is a possibility that junction temperature of power chips exceeded maximum Tj(150
°C).
6 : Fault signal Fo outputs when SC, UV or OT protection works. Fo pulse width is different for each protection modes. At SC failure, Fo pulse width is a fixed
width (=minimum 20
μs), but at UV or OT failure, Fo outputs continuously until recovering from UV or OT state. (But minimum Fo pulse width is 20μs.)
7 : The characteristics of bootstrap Di is described in Fig.2.
Fig. 2 Characteristics of bootstrap Di VF-IF curve (@Ta=25°C) including voltage drop by limiting resistor (Right chart is enlarged chart.)
0
20
40
60
80
100
120
140
160
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
VF [V]
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VF [V]


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