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2N2218A Datasheet(PDF) 1 Page - Boca Semiconductor Corporation

Part No. 2N2218A
Description  NPN SILICON PLANAR SWITCHING TRANSISTORS
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Maker  BOCA [Boca Semiconductor Corporation]
Homepage  http://www.bocasemi.com
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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2218A
2N2219A
TO-39
Switching And Linear Application DC And VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N2218A,19A
UNIT
Collector -Emitter Voltage
VCEO
40
V
Collector -Base Voltage
VCBO
75
V
Emitter -Base Voltage
VEBO
6.0
V
Collector Current Continuous
IC
800
mA
Power Dissipation @Ta=25 degC
PD
800
mW
Derate Above 25deg C
4.57
mW/deg C
@ Tc=25 degC
PD
3.0
W
Derate Above 25deg C
17.1
mW/deg C
Operating And Storage Junction
Tj, Tstg
-65 to +200
deg C
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
VALUE
MIN
MAX
UNIT
Collector -Emitter Voltage
VCEO
IC=10mA,IB=0
40
-
V
Collector -Base Voltage
VCBO
IC=10uA.IE=0
75
-
V
Emitter-Base Voltage
VEBO
IE=10uA, IC=0
6.0
-
V
Collector-Cut off Current
ICBO
VCB=60V, IE=0
-
10
nA
Ta=150 deg C
VCB=60V, IE=0
-
10
uA
ICEX
VCE=60V, VEB=3V
-
10
nA
Emitter-Cut off Current
IEBO
VEB=3V, IC=0
-
10
nA
Base-Cut off Current
IBL
VCE=60V, VEB=3V
-
20
nA
Collector Emitter Saturation Voltage
VCE(Sat)* IC=150mA,IB=15mA
-
0.3
V
IC=500mA,IB=50mA
1.0
V
Base Emitter Saturation Voltage
VBE(Sat) * IC=150mA,IB=15mA
-
0.6-1.2
V
IC=500mA,IB=50mA
-
2.0
V
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
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