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PNM1010H2502FBT1 Datasheet(PDF) 2 Page - Vishay Siliconix |
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PNM1010H2502FBT1 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Document Number: 60057 For technical questions, contact: thinfilm@vishay.com www.vishay.com Revision: 02-Dec-10 77 PNM Precision Thin Film Non-Magnetic Resistor, Surface Mount Chip, ± 25 ppm/°C, Tolerances to 0.1 % Vishay Thin Film Note (1) 0705 and 0805 are the same (only use 0805 when ordering) DIMENSIONS in inches CASE SIZE L W T D E 0402 0.042 ± 0.008 0.022 ± 0.005 0.012 to 0.033 0.010 ± 0.005 0.010 ± 0.005 0502 0.055 ± 0.006 0.025 ± 0.005 0.012 to 0.033 0.010 ± 0.005 0.015 ± 0.005 0505 0.055 ± 0.006 0.050 ± 0.005 0.012 to 0.033 0.010 ± 0.005 0.015 ± 0.005 0603 0.064 ± 0.006 0.032 ± 0.005 0.020 Max. 0.012 ± 0.005 0.015 ± 0.005 0705, 0805 (1) 0.080 ± 0.006 0.050 ± 0.005 0.015 to 0.033 0.015 ± 0.005 0.015 ± 0.005 1005 0.105 ± 0.007 0.050 ± 0.005 0.015 to 0.033 0.015 ± 0.005 0.015 ± 0.005 1010 0.105 ± 0.007 0.100 ± 0.005 0.015 to 0.033 0.015 ± 0.005 0.015 ± 0.005 1206 0.126 ± 0.008 0.063 ± 0.005 0.015 to 0.033 0.020 + 0.005/- 0.010 0.020 + 0.005/- 0.010 1505 0.155 ± 0.007 0.050 ± 0.005 0.015 to 0.033 0.015 ± 0.005 0.015 ± 0.005 2010 0.209 ± 0.009 0.098 ± 0.005 0.015 to 0.033 0.020 ± 0.005 0.020 ± 0.005 2208 0.230 ± 0.007 0.075 ± 0.005 0.015 to 0.033 0.020 ± 0.005 0.020 ± 0.005 2512 0.259 ± 0.009 0.124 ± 0.005 0.015 to 0.033 0.020 ± 0.005 0.020 ± 0.005 D W L T E ENVIRONMENTAL TESTS (Vishay Performance vs. MIL-PRF-55342 Requirements) ENVIRONMENTAL TEST LIMITS MIL-PRF-55342 CHARACTERISTIC “H” TYPICAL VISHAY PERFORMANCE Resistance Temperature Characteristic ± 50 ppm/°C ± 35 ppm/°C Max. Ambient Temperature at Rated Wattage + 70 °C + 70 °C Max. Ambient Temperature at Power Derating + 150 °C + 150 °C Thermal Shock ΔR ± 0.25 % ± 0.040 % Low Temperature Operation ΔR ± 0.25 % ± 0.005 % Short Time Overload ΔR ± 0.10 % ± 0.010 % High Temperature Exposure ΔR ± 0.20 % ± 0.150 % Resistance to Bonding Exposure ΔR ± 0.25 % ± 0.005 % Moisture Resistance ΔR ± 0.40 % ± 0.029 % Life + 70 °C at 1000 hours ΔR ± 0.50 % ± 0.03 % Insulation Resistance 10 000 Ω minimum > 100 000 M Ω |
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