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CM1000E4C-66R Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor |
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CM1000E4C-66R Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor |
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6 / 9 page  < HVIGBT MODULES > CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules December 2012 (HVM-1055-F) 6 PERFORMANCE CURVES HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 0 1 2 3 4 5 6 7 0 5 10 15 20 Gate resistor [Ohm] Erec VCC = 180 0V, IC = 10 00A VGE = ±15 V, LS = 150nH Tj = 12 5°C, Indu ctive load Eon Eoff HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 0.01 0.1 1 10 100 100 1000 10000 Collector Current [A] tf VCC = 1800V, VGE = ±15V RG(on) = 2.4Ω, RG(off) = 8.4Ω L S = 150nH, Tj = 125°C Inductive load tr td (on) td(o ff) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 0 1 2 3 4 5 6 7 05 10 15 20 Gate resistor [Ohm] Ere c VCC = 180 0V, IC = 10 00A VGE = ±15 V, LS = 150nH Tj = 15 0°C, Indu ctive load Eon Eo ff HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 0.01 0.1 1 10 100 100 1000 10000 Collector Current [A] tf VCC = 1800V, VGE = ±15V RG(on) = 2.4Ω, RG(off) = 8.4Ω L S = 150nH, Tj = 150°C Inductive load tr td(o n) td(o ff) |
Similar Part No. - CM1000E4C-66R |
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Similar Description - CM1000E4C-66R |
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