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CM100RX-24S1 Datasheet(PDF) 11 Page - Mitsubishi Electric Semiconductor

Part # CM100RX-24S1
Description  HIGH POWER SWITCHING USE INSULATED TYPE
Download  13 Pages
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

CM100RX-24S1 Datasheet(HTML) 11 Page - Mitsubishi Electric Semiconductor

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< IGBT MODULES >
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
BRAKE PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=13
Ω,
INDUCTIVE LOAD, PER PULSE
---------------: T j =150 °C, - - - - -: Tj =125 °C
VCC=600 V, IC/IF=50 A, VGE=±15 V,
INDUCTIVE LOAD, PER PULSE
---------------: T j =150 °C, - - - - -: Tj =125 °C
0.01
0.1
1
10
1
10
100
0.1
1
10
100
1
10
100
10
100
1000
COLLECTOR CURRENT
IC
(A)
FORWARD CURRENT
IF
(A)
EXTERNAL GATE RESISTANCE
RG
(
Ω)
BRAKE DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
VCC=600 V, VGE=±15 V, RG=13
Ω, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: Tj =125 °C
Single pulse, TC=25 °C
R t h( j - c )Q =0.44 K/W, R th( j - c) D =0.66 K/W
10
100
1000
1
10
100
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
FORWARD CURRENT
IF
(A)
TIME
(S)
E on
E o ff
I rr
t rr
E rr
E on
E o ff
E rr
Publication Date : December 2013
11


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