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V3.5MLA0603N Datasheet(PDF) 5 Page - Littelfuse |
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V3.5MLA0603N Datasheet(HTML) 5 Page - Littelfuse |
5 / 8 page 41 Varistor Products ©2009 Littelfuse, Inc. Revision: January 15, 2010 ML Varistor Series Surface Mount Multilayer Varistors (MLVs) > ML Series Specifications are subject to change without notice. Please refer to www.littelfuse.com/series/ML.html for current information. Device Characteristics At low current levels, the V-I curve of the multilayer transient voltage suppressor approaches a linear (ohmic) relationship and shows a temperature dependent effect. At or below the maximum working voltage, the suppressor is in a high resistance modex (approaching 106Ω at its maximum rated working voltage). Leakage currents at maximum rated voltage are below 100 μA, typically 25μA; for 0402 size below 20 μA, typically 5μA. 100% 1E-9 1E-8 SUPPRESSOR CURRENT (ADC) 10% 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 25 50 75 100 125oC o o o o Clamping Voltage Over Temperature (V C at 10A) 100 10 20 V26MLA1206 40 60 80 100 120 140 TEMPERATURE (oC) V5.5MLA1206 0 -20 -40 -60 Typical Temperature Dependance of the Haracteristic Curve in the Leakage Region Speed of Response The Multilayer Suppressor is a leadless device. Its response time is not limited by the parasitic lead inductances found in other surface mount packages. The response time of the Z NO dielectric material is less than 1ns and the ML can clamp very fast dV/dT events such as ESD. Additionally, in "real world" applications, the associated circuit wiring is often the greatest factor effecting speed of response. Therefore, transient suppressor placement within a circuit can be considered important in certain instances. GRAINS DEPLETION FIRED CERAMIC DIELECTRIC REGION METAL ELECTRODES DEPLETION REGION METAL END TERMINATION Multilayer Internal Construction Energy Absorption/Peak Current Capability Energy dissipated within the ML Series is calculated by multiplying the clamping voltage, transient current and transient duration. An important advantage of the multilayer is its interdigitated electrode construction within the mass of dielectric material. This results in excellent current distribution and the peak temperature per energy absorbed is very low. The matrix of semiconducting grains combine to absorb and distribute transient energy (heat) (see Speed of Response). This dramatically reduces peak temperature; thermal stresses and enhances device reliability. As a measure of the device capability in energy and peak current handling, the V26MLA1206A part was tested with multiple pulses at its peak current rating (150A, 8/20 μs). At the end of the test,10,000 pulses later, the device voltage characteristics are still well within specification. 100 10 0 V26MLA1206 2000 4000 6000 8000 10000 12000 NUMBER OF PULSES PEAK CURRENT = 150A 8/20 s DURATION, 30s BETWEEN PULSES Repetitive Pulse Capability Figure 10 Figure 11 Figure 12 Figure 13 |
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