2SA1360O datasheet(2/5 Pages) TOSHIBA

Part #	2SA1360O

Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2SA1360

2010-03-10

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = −150 V, IE = 0

―

−0.1

μA

Emitter cut-off current

IEBO

VEB = −5 V, IC = 0

―

−0.1

μA

Collector-emitter breakdown voltage

V (BR) CEO

IC = −1 mA, IB = 0

−150

―

V

DC current gain

hFE

(Note 2)

VCE = −5 V, IC = −10 mA

80

―

240

Collector-emitter saturation voltage

VCE (sat)

IC = −10 mA, IB = −1 mA

―

−1.0

V

Base-emitter voltage

VBE

VCE = −5 V, IC = −10 mA

―

−0.8

V

Transition frequency

fT

VCE = −5 V, IC = −10 mA

―

200

―

MHz

Collector output capacitance

Cob

VCB = −10 V, IE = 0, f = 1 MHz

―

2.5

―

pF

Note 2: hFE classification O: 80 to 160, Y: 120 to 240

Marking

Note 3: A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

A1360

Part No. (or abbreviation code)

Characteristics indicator

Lot No.

Note 3

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