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TPS79230DBVRG4 Datasheet(PDF) 6 Page - Texas Instruments

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Part # TPS79230DBVRG4
Description  ULTRALOW-NOISE, HIGH PSRR, FAST RF 100-mA LOW-DROPOUT LINEAR REGULATORS
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TPS79230DBVRG4 Datasheet(HTML) 6 Page - Texas Instruments

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TPS79201, TPS79225
TPS79228, TPS79230
SLVS337B – MARCH 2001 – REVISED MAY 2002
www.ti.com
6
TYPICAL CHARACTERISTICS
Figure 10
0
20
40
60
80
100
120
0
0.02
0.04
0.06
0.08
0.1
TJ = 125°C
TJ = 25°C
TJ = –40°C
IO = 100 mA
TPS79228
DROPOUT VOLTAGE
vs
OUTPUT CURRENT
IO – Output Current – A
Figure 11
0
20
40
60
80
100
120
2.5
3
3.5
4
4.5
5
TJ = 125°C
TJ = 25°C
TJ = –40°C
IO = 100 mA
VI – Input Voltage – V
TPS79201
DROPOUT VOLTAGE
vs
INPUT VOLTAGE
Figure 12
2.2
2.7
3.2
3.7
4.2
4.7
1.5
2
2.5
3
3.5
4
4.5
5
TJ = 125°C
TJ =– 40°C
TJ = 25°C
VI = 3.2 V
Co = 10 µF
5.2
MINIMUM REQUIRED INPUT VOLTAGE
vs
OUTPUT VOLTAGE
VO – Output Voltage – V
Figure 13
10
100
1 k
10 k
20
50
90
100 k
1 M
10 M
f – Frequency – Hz
TPS79228
RIPPLE REJECTION
vs
FREQUENCY
IO = 10 mA
60
0
VI = 3.8 V
Co = 10 µF
C(byp) = 0.01 µF
IO = 100 mA
10
30
40
70
80
Figure 14
10
100
1 k
10 k
20
60
100
100 k
1 M
10 M
f – Frequency – Hz
TPS79228
RIPPLE REJECTION
vs
FREQUENCY
VI = 3.8 V
Co = 1 µF
C(byp) = 0.01 µF
IO = 10 mA
IO = 100 mA
40
70
90
30
50
80
Figure 15
10
100
1 k
10 k
20
60
100
100 k
1 M
10 M
f – Frequency – Hz
TPS79228
RIPPLE REJECTION
vs
FREQUENCY
VI = 3.8 V
Co = 1 µF
C(byp) = 0.1 µF
IO = 10 mA
IO = 100 mA
40
70
90
30
50
80
Figure 16
3
TPS79228
OUTPUT VOLTAGE, ENABLE VOLTAGE
vs
TIME (START-UP)
t – Time –
µs
060
40
20
80 100
140
120
160 180 200
VI = 3.8 V
VO = 2.8 V
IO = 100 mA
Co = 1 µF
TJ = 25°C
1
2
0
0
2
C(byp) = 0.001 µF
C(byp) = 0.0047 µF
C(byp) = 0.01 µF
4
Figure 17
20
TPS79228
LINE TRANSIENT RESPONSE
t – Time –
µs
015
10
520
25
35
30
40
45 50
IO = 100 mA
Co = 1 µF
C(byp) = 0.01 µF
0
4.8
3.8
–20
dv
dt
+
0.4 V
µs
Figure 18
t – Time –
µs
TPS79228
LOAD TRANSIENT RESPONSE
0
0
150
100
50
200 250
350
300
400 450
20
0
–20
100
500
VI = 3.8 V
Co = 10 µF
–40
di
dt
+
0.04 A
µs


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