ADG5433BCPZ-REEL7 datasheet(5/24 Pages) AD

Part #	ADG5433BCPZ-REEL7

Description	High Voltage Latch-Up Proof, Triple/Quad SPDT Switches

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Data Sheet

ADG5433/ADG5434

Rev. C | Page 5 of 24

Parameter

25°C

−40°C to +85°C

−40°C to +125°C

Unit

Test Conditions/Comments

Insertion Loss

−0.8

dB typ

RL = 50 Ω, CL = 5 pF, f = 1 MHz;

see Figure 31

CS (Off)

15

pF typ

VS = 0 V, f = 1 MHz

CD (Off)

23

pF typ

VS = 0 V, f = 1 MHz

CD (On), CS (On)

52

pF typ

VS = 0 V, f = 1 MHz

POWER REQUIREMENTS

VDD = +22 V, VSS = −22 V

IDD

50

µA typ

Digital inputs = 0 V or VDD

70

110

µA max

ISS

0.001

µA typ

Digital inputs = 0 V or VDD

1

µA max

VDD/VSS

±9/±22

V min/V max

GND = 0 V

1

Guaranteed by design; not subject to production test.

12 V SINGLE SUPPLY

VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.

Table 3.

Parameter

25°C

−40°C to +85°C

−40°C to +125°C

Unit

Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

0 V to VDD

V

On Resistance, RON

26

Ω typ

VS = 0 V to 10 V, IS = −10 mA; see

Figure 27

30

36

42

Ω max

VDD = 10.8 V, VSS = 0 V

On-Resistance Match Between Channels,

∆RON

0.3

Ω typ

VS = 0 V to 10 V, IS = −10 mA

1

1.5

1.6

Ω max

On-Resistance Flatness, RFLAT (ON)

5.5

Ω typ

VS = 0 V to 10 V, IS = −10 mA

6.5

8

12

Ω max

LEAKAGE CURRENTS

VDD = 13.2 V, VSS = 0 V

Source Off Leakage, IS (Off)

±0.05

nA typ

VS = 1 V/10 V, VD = 10 V/1 V

±0.25

±1

±7

nA max

Drain Off Leakage, ID (Off)

±0.1

nA typ

VS = 1 V/10 V, VD = 10 V/1 V

±0.4

±4

±30

nA max

Channel On Leakage, ID (On), IS (On)

±0.1

nA typ

VS = VD = 1 V/10 V; see Figure 26

±0.4

±4

±30

nA max

DIGITAL INPUTS

Input High Voltage, VINH

2.0

V min

Input Low Voltage, VINL

0.8

V max

Input Current, IINL or IINH

0.002

µA typ

VIN = VGND or VDD

±0.1

µA max

Digital Input Capacitance, CIN

6

pF typ

DYNAMIC CHARACTERISTICS1

Transition Time, tTRANSITION

220

ns typ

RL = 300 Ω, CL = 35 pF

290

357

400

ns max

VS = 8 V

tON (EN)

228

ns typ

RL = 300 Ω, CL = 35 pF

289

370

426

ns max

VS = 8 V; see Figure 34

tOFF (EN)

90

ns typ

RL = 300 Ω, CL = 35 pF

115

131

151

ns max

VS = 8 V; see Figure 34

Break-Before-Make Time Delay, tD

106

ns typ

RL = 300 Ω, CL = 35 pF

54

ns min

VS1 = VS2 = 8 V; see Figure 33

Charge Injection, QINJ

60

pC typ

VS = 6 V, RS = 0 Ω, CL = 1 nF; see

Figure 35

Off Isolation

−60

dB typ

RL = 50 Ω, CL = 5 pF, f = 1 MHz; see

Figure 29

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