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TSM15N50CIC0 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM15N50CIC0 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 10 page TSM15N50 500V N-Channel Power MOSFET 2/10 Version: B13 Thermal Performance Parameter Symbol TO-220 ITO-220 Unit Thermal Resistance - Junction to Case RӨJC 0.54 2.34 oC/W Thermal Resistance - Junction to Ambient RӨJA 62.5 Notes: Surface mounted on FR4 board t ≤ 10sec Electrical Specifications (Tc = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 500 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 7.0A RDS(ON) -- 0.35 0.44 Ω Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance VDS = 30V, ID = 7.0A gfs -- 10 -- S Diode Forward Voltage IS = 14A, VGS = 0V VSD -- -- 1.5 V Dynamic b Total Gate Charge VDS = 400V, ID = 14A, VGS = 10V Qg -- 39 -- nC Gate-Source Charge Qgs -- 11 -- Gate-Drain Charge Qgd -- 8.6 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Ciss -- 2263 -- pF Output Capacitance Coss -- 211 -- Reverse Transfer Capacitance Crss -- 6.4 -- Switching c Turn-On Delay Time VDD = 250V, ID = 14A, RG = 25Ω td(on) -- 65 -- nS Turn-On Rise Time tr -- 55 -- Turn-Off Delay Time td(off) -- 144 -- Turn-Off Fall Time tf -- 58 -- Reverse Recovery Time VGS = 0V, IS = 14A, dIF/dt = 100A/us tfr -- 381 -- nS Reverse Recovery Charge Qfr -- 4.4 -- uC Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Max Rating EAS Test Condition: VDD = 50V, IAS=14A, L=5.9mH, RG=25Ω, Starting TJ=25℃ 3. Guaranteed 100% EAS Test Condition: VDD = 50V, IAS=14A, L=1mH, RG=25Ω, Starting TJ=25℃ 4. ISD ≤14A, di/dt ≤ 200A/uS, VDD ≤ BV, Starting TJ=25℃ 5. Pulse test: pulse width ≤300uS, duty cycle ≤2% 6. b For design reference only, not subject to production testing. 7. c Switching time is essentially independent of operating temperature. |
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