Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

AT49BV020-90VI Datasheet(PDF) 2 Page - ATMEL Corporation

Part # AT49BV020-90VI
Description  2-Megabit 256K x 8 Single 2.7-volt Battery-Voltage Flash Memory
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ATMEL [ATMEL Corporation]
Direct Link  http://www.atmel.com
Logo ATMEL - ATMEL Corporation

AT49BV020-90VI Datasheet(HTML) 2 Page - ATMEL Corporation

  AT49BV020-90VI Datasheet HTML 1Page - ATMEL Corporation AT49BV020-90VI Datasheet HTML 2Page - ATMEL Corporation AT49BV020-90VI Datasheet HTML 3Page - ATMEL Corporation AT49BV020-90VI Datasheet HTML 4Page - ATMEL Corporation AT49BV020-90VI Datasheet HTML 5Page - ATMEL Corporation AT49BV020-90VI Datasheet HTML 6Page - ATMEL Corporation AT49BV020-90VI Datasheet HTML 7Page - ATMEL Corporation AT49BV020-90VI Datasheet HTML 8Page - ATMEL Corporation AT49BV020-90VI Datasheet HTML 9Page - ATMEL Corporation Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 10 page
background image
AT49BV020
2
The optional 8K bytes boot block section includes a repro-
gramming write lock out feature to provide data integrity.
The boot sector is designed to contain user secure code,
and when the feature is enabled, the boot sector is perma-
nently protected from being reprogrammed.
Block Diagram
Device Operation
READ: The AT49BV/LV020 is accessed like an EPROM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state whenever CE or OE is high. This dual-line
control gives designers flexibility in preventing bus conten-
tion.
ERASURE: Before a byte can be reprogrammed, the 256K
bytes memory array (or 248K bytes if the boot block fea-
tured is used) must be erased. The erased state of the
memory bits is a logical “1”. The entire device can be
erased at one time by using a 6-byte software code. The
software chip erase code consists of 6-byte load com-
mands to specific address locations with a specific data
pattern (please refer to the Chip Erase Cycle Waveforms).
After the software chip erase has been initiated, the device
will internally time the erase operation so that no external
clocks are required. The maximum time needed to erase
the whole chip is t
EC. If the boot block lockout feature has
been enabled, the data in the boot sector will not be
erased.
BYTE PROGRAMMING: Once the memory array is
erased, the device is programmed (to a logical “0”) on a
byte-by-byte basis. Please note that a data “0” cannot be
programmed back to a “1”; only erase operations can con-
vert “0”s to “1”s. Programming is accomplished via the
internal device command register and is a 4 bus cycle oper-
ation (please refer to the Command Definitions table). The
device will automatically generate the required internal pro-
gram pulses.
The program cycle has addresses latched on the falling
edge of WE or CE, whichever occurs last, and the data
latched on the rising edge of WE or CE, whichever occurs
first. Programming is completed after the specified tBP cycle
time. The DATA polling feature may also be used to indicate
the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT: The device
has one designated block that has a programming lockout
feature. This feature prevents programming of data in the
designated block once the feature has been enabled. The
size of the block is 8K bytes. This block, referred to as the
boot block, can contain secure code that is used to bring up
the system. Enabling the lockout feature will allow the boot
code to stay in the device while data in the rest of the
device is updated. This feature does not have to be acti-
vated; the boot block's usage as a write protected region is
optional to the user. The address range of the boot block is
00000H to 01FFFH.
Once the feature is enabled, the data in the boot block can
no longer be erased or programmed. Data in the main
memory block can still be changed through the regular pro-
gramming method. To activate the lockout feature, a series
of six program commands to specific addresses with spe-
cific data must be performed. Please refer to the Command
Definitions table.
BOOT BLOCK LOCKOUT DETECTION: A software
method is available to determine if programming of the boot
block section is locked out. When the device is in the soft-
ware product identification mode (see Software Product
Identification Entry and Exit sections) a read from address
location 00002H will show if programming the boot block is
locked out. If the data on I/O0 is low, the boot block can be
programmed; if the data on I/O0 is high, the program lock-
out feature has been activated and the block cannot be
programmed. The software product identification code
should be used to return to standard operation.
PRODUCT IDENTIFICATION: The product identification
mode identifies the device and manufacturer as Atmel. It


Similar Part No. - AT49BV020-90VI

ManufacturerPart #DatasheetDescription
logo
ATMEL Corporation
AT49BV001 ATMEL-AT49BV001 Datasheet
171Kb / 20P
   1-Megabit 128K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
AT49BV001 ATMEL-AT49BV001 Datasheet
290Kb / 21P
   1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV001-12JC ATMEL-AT49BV001-12JC Datasheet
171Kb / 20P
   1-Megabit 128K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
AT49BV001-12PC ATMEL-AT49BV001-12PC Datasheet
171Kb / 20P
   1-Megabit 128K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
AT49BV001-12TC ATMEL-AT49BV001-12TC Datasheet
171Kb / 20P
   1-Megabit 128K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
More results

Similar Description - AT49BV020-90VI

ManufacturerPart #DatasheetDescription
logo
ATMEL Corporation
AT49BV-LV002 ATMEL-AT49BV-LV002 Datasheet
120Kb / 21P
   2-Megabit (256K x 8) Single 2.7-volt Battery-Voltage??Flash Memory
AT49BV002A ATMEL-AT49BV002A Datasheet
207Kb / 18P
   2-megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT29BV020 ATMEL-AT29BV020_08 Datasheet
368Kb / 16P
   2-megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV002 ATMEL-AT49BV002 Datasheet
171Kb / 20P
   2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
AT29BV020 ATMEL-AT29BV020 Datasheet
489Kb / 10P
   2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
AT49BV2048A ATMEL-AT49BV2048A Datasheet
263Kb / 17P
   2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage??Flash Memory
AT49LV4096A ATMEL-AT49LV4096A Datasheet
365Kb / 16P
   4-megabit (512K x 8/256K x 16) Single 2.7-volt Battery-Voltage Flash Memory
AT49BV080 ATMEL-AT49BV080 Datasheet
201Kb / 12P
   8-Megabit 1M x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49BV010 ATMEL-AT49BV010 Datasheet
88Kb / 11P
   1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49BV040 ATMEL-AT49BV040 Datasheet
210Kb / 12P
   4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com