AT28C256

256K (32K x 8)

Paged

CMOS

E

Features

Internal Address and Data Latches for 64-Bytes

Internal Control Timer

Page Write Cycle Time: 3 ms or 10 ms Maximum

1 to 64-Byte Page Write Operation

50 mA Active Current

200

µA CMOS Standby Current

Endurance: 10

Data Retention: 10 Years

Description

The AT28C256 is a high-performance Electrically Erasable and Programmable Read

Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-

tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access

times to 150 ns with power dissipation of just 440 mW. When the device is deselected,

the CMOS standby current is less than 200

µA.

(continued)

LCC, PLCC

Top View

Pin Name

Function

A0 - A14

Addresses

CE

Chip Enable

OE

Output Enable

WE

Write Enable

I/O0 - I/O7

Data Inputs/Outputs

NC

No Connect

DC

Don’t Connect

Pin Configurations

TSOP

Top View

PGA

Top View

Note: PLCC package pins 1 and

17 are DON’T CONNECT.

CERDIP, PDIP,

FLATPACK, SOIC

Top View

0006F

AT28C256

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