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TSG15N120 Datasheet(PDF) 3 Page - Taiwan Semiconductor Company, Ltd |
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TSG15N120 Datasheet(HTML) 3 Page - Taiwan Semiconductor Company, Ltd |
3 / 9 page TSG15N120CN N-Channel IGBT with FRD. 3/9 Version: B12 Electrical Specifications of the DIODE (Tc=25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Diode Forward Voltage IF = 15A, TJ=25 oC VFM -- 2.0 -- V TJ=125 oC -- 2.2 -- V Reverse Recovery Time IF = 15A, dl/dt=200A/us TJ=25 oC tfr -- 200 -- ns TJ=125 oC -- 270 -- Reverse Recovery Current TJ=25 oC Ifr -- 22 -- A TJ=125 oC -- 28 -- Reverse Recovery Charge TJ=25 oC Qfr -- 2230 -- nC TJ=125 oC -- 3750 -- |
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