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TSF30H120C Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSF30H120C Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 3 page - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability SYMBOL UNIT VRRM V dV/dt V/μs VBR V IF = 5A IF = 7.5A IF = 15A IF = 5A IF = 7.5A IF = 15A TJ = 25°C μA TJ = 125°C mA RθjC OC/W TJ OC TSTG OC Document Number: DS_D1401025 Version: B14 - Halogen-free according to IEC 61249-2-21 definition Molding compound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test TSF30H120C 150 Taiwan Semiconductor A IF(AV) ITO-220AB per device - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode PARAMETER Polarity: As marked Weight: 1.7g (approximately) 1500 120 Operating junction temperature range Storage temperature range - 55 to +150 - 55 to +150 Typical thermal resistance per diode 4.5 MECHANICAL DATA Maximum average forward rectified current 10000 Mounting torque: 5 in-lbs. max. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) Voltage rate of change (Rated VR) per diode Case: ITO-220AB Maximum repetitive peak reverse voltage 0.58 - - MIN. Isolation voltage from terminal to heatsink t = 1 min VAC TYP. MAX. Breakdown voltage ( IR =1.0mA, Ta =25°C ) - Trench MOS Barrier Schottky Rectifier TSF30H120C 120 V A 0.93 FEATURES 30 IFSM 15 - Instantaneous forward voltage per diode ( Note1 ) TJ = 25°C VF -0.65 - TJ = 125°C VF - - 500 - V -0.70 - -0.81 0.53 -20 Note 1: Pulse Test with Pulse Width=300 μs, 1% Duty Cycle - - 0.67 0.75 Instantaneous reverse current per diode at rated reverse voltage IR - |
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