Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

AT49F8192-90TC Datasheet(PDF) 3 Page - ATMEL Corporation

Part # AT49F8192-90TC
Description  8-Megabit 512K x 16 5-volt Only CMOS Flash Memory
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ATMEL [ATMEL Corporation]
Direct Link  http://www.atmel.com
Logo ATMEL - ATMEL Corporation

AT49F8192-90TC Datasheet(HTML) 3 Page - ATMEL Corporation

  AT49F8192-90TC Datasheet HTML 1Page - ATMEL Corporation AT49F8192-90TC Datasheet HTML 2Page - ATMEL Corporation AT49F8192-90TC Datasheet HTML 3Page - ATMEL Corporation AT49F8192-90TC Datasheet HTML 4Page - ATMEL Corporation AT49F8192-90TC Datasheet HTML 5Page - ATMEL Corporation AT49F8192-90TC Datasheet HTML 6Page - ATMEL Corporation AT49F8192-90TC Datasheet HTML 7Page - ATMEL Corporation AT49F8192-90TC Datasheet HTML 8Page - ATMEL Corporation AT49F8192-90TC Datasheet HTML 9Page - ATMEL Corporation Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 11 page
background image
AT49F8192/8192T
3
ERASURE: Before a word can be reprogrammed, it must
be erased. The erased state of the memory bits is a logical
“1”. The entire device can be erased at one time by using a
6-byte software code.
After the software chip erase has been initiated, the device
will internally time the erase operation so that no external
clocks are required. The maximum time needed to erase
the whole chip is tEC.
CHIP ERASE: If the boot block lockout has been enabled,
the Chip Erase function is disabled; sector erases for the
parameter blocks and main memory block will still operate.
After the full chip erase the device will return back to read
mode. Any command during chip erase will be ignored.
SECTOR ERASE: As an alternative to a full chip erase,
the device is organized into three sectors that can be indi-
vidually erased. There are two 8K word parameter block
sections and one sector consisting of the boot block and
the main memory array block. The Sector Erase command
is a six bus cycle operation. The sector address is latched
on the falling WE edge of the sixth cycle while the 30H data
input command is latched at the rising edge of WE. The
sector erase starts after the rising edge of WE of the sixth
cycle. The erase operation is internally controlled; it will
automatically time to completion. When the boot block pro-
gramming lockout feature is not enabled, the boot block
and the main memory block will erase together (from the
same sector erase command). Once the boot region has
been protected, only the main memory array sector will
erase when its sector erase command is issued.
WORD PROGRAMMING: Once a memory block is
erased, it is programmed (to a logical “0”) on a word-by-
word basis. Programming is accomplished via the internal
device command register and is a 4 bus cycle operation.
The device will automatically generate the required internal
program pulses.
Any commands written to the chip during the embedded
programming cycle will be ignored. If a hardware reset hap-
pens during programming, the data at the location being
programmed will be corrupted. Please note that a data “0”
cannot be programmed back to a “1”; only erase operations
can convert “0”s to “1”s. Programming is completed after
the specified tBP cycle time. The DATA polling feature may
also be used to indicate the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT: The device
has one designated block that has a programming lockout
feature. This feature prevents programming of data in the
designated block once the feature has been enabled. The
size of the block is 8K words. This block, referred to as the
boot block, can contain secure code that is used to bring up
the system. Enabling the lockout feature will allow the boot
code to stay in the device while data in the rest of the
device is updated. This feature does not have to be acti-
vated; the boot block's usage as a write protected region is
optional to the user. The address range of the 48F8192
boot block is 00000H to 01FFFH while the address range of
the 49F8192T is 7E000H to 7FFFFH.
Once the feature is enabled, the data in the boot block can
no longer be erased or programmed when input levels of
5.5V or less are used. Data in the main memory block can
still be changed through the regular programming method.
To activate the lockout feature, a series of six program
commands to specific addresses with specific data must be
performed. Please refer to the Command Definitions table.
BOOT BLOCK LOCKOUT DETECTION: A software
method is available to determine if programming of the boot
block section is locked out. When the device is in the soft-
ware product identification mode (see Software Product
Identification Entry and Exit sections) a read from address
location 00002H will show if programming the boot block is
locked out. If the data on I/O0 is low, the boot block can be
programmed; if the data on I/O0 is high, the program lock-
out feature has been enabled and the block cannot be pro-
grammed. The software product identification exit code
should be used to return to standard operation.
BOOT BLOCK PROGRAMMING LOCKOUT OVER-
RIDE: The user can override the boot block programming
lockout by taking the RESET pin to 12 volts during the
entire chip erase, sector erase or word programming oper-
ation. When the RESET pin is brought back to TTL levels
the boot block programming lockout feature is again active.
PRODUCT IDENTIFICATION: The product identification
mode identifies the device and manufacturer as Atmel. It
may be accessed by hardware or software operation. The
hardware operation mode can be used by an external pro-
grammer to identify the correct programming algorithm for
the Atmel product.
For details, see Operating Modes (for hardware operation)
or Software Product Identification. The manufacturer and
device code is the same for both modes.
DATA POLLING: The AT49F8192 features DATA polling
to indicate the end of a program cycle. During a program
cycle an attempted read of the last byte loaded will result in
the complement of the loaded data on I/O7. Once the pro-
gram cycle has been completed, true data is valid on all
outputs and the next cycle may begin. During a chip or sec-
tor erase operation, an attempt to read the device will give
a “0” on I/O7. Once the program or erase cycle has com-
pleted, true data will be read from the device. DATA polling
may begin at any time during the program cycle.
TOGGLE BIT: In addition to DATA polling the AT49F8192
provides another method for determining the end of a pro-
gram or erase cycle. During a program or erase operation,
successive attempts to read data from the device will result
in I/O6 toggling between one and zero. Once the program
cycle has completed, I/O6 will stop toggling and valid data


Similar Part No. - AT49F8192-90TC

ManufacturerPart #DatasheetDescription
logo
ATMEL Corporation
AT49F8192A ATMEL-AT49F8192A Datasheet
170Kb / 18P
   8-megabit (1M x 8/512K x 16) Flash Memory
AT49F8192A ATMEL-AT49F8192A Datasheet
344Kb / 17P
   8-megabit (1M x 8/512K x 16) Flash Memory
AT49F8192A-12CC ATMEL-AT49F8192A-12CC Datasheet
344Kb / 17P
   8-megabit (1M x 8/512K x 16) Flash Memory
AT49F8192A-12CI ATMEL-AT49F8192A-12CI Datasheet
344Kb / 17P
   8-megabit (1M x 8/512K x 16) Flash Memory
AT49F8192A-12RC ATMEL-AT49F8192A-12RC Datasheet
344Kb / 17P
   8-megabit (1M x 8/512K x 16) Flash Memory
More results

Similar Description - AT49F8192-90TC

ManufacturerPart #DatasheetDescription
logo
ATMEL Corporation
AT49F040 ATMEL-AT49F040 Datasheet
229Kb / 10P
   4-Megabit 512K x 8 5-volt Only CMOS Flash Memory
AT49F040 ATMEL-AT49F040 Datasheet
245Kb / 10P
   4 Megabit 512K x 8 5-volt Only CMOS Flash Memory
AT49F040T ATMEL-AT49F040T Datasheet
232Kb / 12P
   4-Megabit (512K x 8) 5-volt Only CMOS Flash Memory
AT49F8011 ATMEL-AT49F8011 Datasheet
231Kb / 20P
   8-megabit (512K x 16/ 1M x 8) 5-volt Only Flash Memory
AT49F040B ATMEL-AT49F040B Datasheet
239Kb / 19P
   4-megabit (512K x 8) 5-volt Only Flash Memory
AT49F040A ATMEL-AT49F040A Datasheet
248Kb / 16P
   4-megabit (512K x 8) 5-volt Only Flash Memory
AT49F040A-70JU ATMEL-AT49F040A-70JU Datasheet
284Kb / 17P
   4-megabit (512K x 8) 5-volt Only Flash Memory
logo
PMC-Sierra, Inc
PM29F004 PMC-PM29F004 Datasheet
82Kb / 21P
   4 Megabit (512K X 8) 5.0 Volt-Only CMOS Flash Memory
logo
ATMEL Corporation
AT49BV802D ATMEL-AT49BV802D Datasheet
434Kb / 31P
   8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory
AT49BV8011 ATMEL-AT49BV8011 Datasheet
306Kb / 18P
   8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com