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TSC966CWRPG Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSC966CWRPG Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 5 page TSC966 NPN Silicon Planar High Voltage Transistor 1/5 Version: D12 TO-92 SOT-223 PRODUCT SUMMARY BVCBO 600V BVCEO 400V IC 300mA VCE(SAT) 0.5V @ IC / IB = 50mA / 5mA Features ● High BVceo, BVcbo ● High current gain Ordering Information Part No. Package Packing TSC966CT B0 TO-92 1Kpcs / Bulk TSC966CT A3 TO-92 2Kpcs / Ammo TSC966CW RPG SOT-223 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Structure ● Epitaxial Planar Type Absolute Maximum Rating (TA=25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCES 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current DC IC 0.3 A Pulse 1 Total Power Dissipation @ TA=25 oC TO-92 Ptot 0.9 W SOT-223 1 Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Electrical Specifications (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = 50uA BVCBO 600 -- -- V Collector-Emitter Saturation Voltage IC = 100uA, VBE= 0 BVCES 600 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE = 50uA BVEBO 7 -- -- V Collector-Base Cutoff Current VCB = 600V ICBO -- -- 0.5 uA Collector-Emitter Cutoff Current VCE = 400V ICEO -- -- 1 uA Emitter-Base Cutoff Current VEB = 7V IEBO -- -- 1.5 uA Collector-Emitter Saturation Voltage IC = 50mA, IB = 5mA VCE(SAT) -- -- 0.5 V Base-Emitter Saturation Voltage IC = 50mA, IB = 5mA VBE(SAT) -- -- 1 V DC Current Transfer Ratio VCE = 5V, IC = 1mA hFE 1 100 -- -- VCE = 5V, IC = 20mA hFE 2 90 -- 300 Transition Frequency VCE = 10V, IE= 20mA fT 50 -- -- MHz Output Capacitance VCB = 20V, f=1MHz Cob -- -- 7 pF Pin Definition: 1. Emitter 2. Collector 3. Base Pin Definition: 1. Base 2. Collector 3. Emitter |
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